Composition-tuned optical absorption and luminescence of TlGaxIn1-xS2 layered mixed crystals at T = 10 K
Source abstract
Abstract
Abstract Transmittance on TlGaxIn1-xS2 mixed crystals (0 ≤ x ≤ 1) was carried out in the 2.35–2.75 eV photon energy range at T = 10 K. Band gap energies of crystals were obtained utilizing the derivative spectra of transmittance and photon energy dependence of absorption coefficient. The dependence of direct band gap energy on composition at T = 10 K revealed that as gallium composition is elevated in the mixed crystals, the direct band gap energy increases from 2.56 to 2.67 eV. Photoluminescence spectra of TlGaxIn1-xS2 crystals were studied in the photon energy region of 2.30–2.95 eV at T = 10 K. The observed bands were attributed to transitions of electrons from shallow donor levels to valence band. The shift of PL bands to higher energies with increasing gallium content was revealed. Furthermore, composition ratio of crystals was determined from energy dispersive spectroscopy experiments.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Solid-state spectroscopy and crystallography · Crystal Structures and Properties · Perovskite Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (30)
Show source-provided references
1. Bonding and structure of TlGaSe210.1021/ja00017a018 ↗
2. Electronic properties and phase transitions in low-dimensional semiconductors10.1088/0953-8984/20/29/293202 ↗
3. Black phosphorus nanodevices at terahertz frequencies: photodetectors and future challenges10.1063/1.4979090 ↗
4. Black phosphorus terahertz photodetectors10.1002/adma.201502052 ↗
5. The advent of indium selenide: synthesis, electronic properties, ambient stability and applications10.3390/nano7110372 ↗
6. Optoelectronic devices, plasmonics and photonics with topological insulators10.1063/1.4977782 ↗
7. Efficient terahertz detection in black-phosphorus nano-transistors with selective and controllable plasma-wave, bolometric and thermoelectric response10.1038/srep20474 ↗
8. When plasmonics meets membrane technology10.1088/0953-8984/28/36/363003 ↗
9. Interplay of surface and Dirac plasmons in topological insulators: the case of Bi2Se310.1103/PhysRevLett.115.216802 ↗
10. Optical and photoelectrical properties of the TlGaS2 ternary compounds10.1016/0038-1098(96)00294-3 ↗
11. Birefringes and exsitonic spectra of TlGaS2 crystals10.1016/j.optcom.2013.02.019 ↗
12. Characteristics of traps in TlInS2 single crystals10.1016/j.cap.2013.07.020 ↗
13. Phase transition and Raman-active modes in TlInS210.1002/pssc.201200868 ↗
14. Ferroelasticity of TlInS2 crystal10.1016/j.ssc.2013.12.034 ↗
15. Temperature behavior of dielectric function spectra and optical transitions in TlGaS210.1002/pssb.201400342 ↗
16. Two-photon absorption in layered TlGaSe2, TlInS2, TlGaS2 and GaSe crystals10.1016/S0038-1098(99)00202-1 ↗
17. Influence of isomorphic atom substitution on lattice anisotropy of thallium dichalcogenide layered mixed crystals10.12693/APhysPolA.110.471 ↗
18. Compositional dependence of refractive index and oscillator parameters in TlGaxIn1-xS2 layered mixed crystals (0 ≤ x ≤ 1)10.1016/j.ssc.2010.06.031 ↗
19. Composition dependence of lattice parameters and band gap energies of thallium based layered mixed crystals10.1007/s12648-014-0636-x ↗
20. Interband critical points in TlGaxIn1-xS2 layered mixed crystals (0 ≤ x ≤ 1)10.1016/j.jallcom.2013.07.134 ↗
21. Friel · 2003
22. Goldstein · 2007
23. Recent applications in derivative ultraviolet/visible absorption spectrophotometry: 2009-201110.1016/j.microc.2012.05.012 ↗
24. Excitonic and other interband transitions in TlInS2 single crystals10.1103/PhysRevB.50.7488 ↗
25. Reflection spectra of TlInS2 single crystals
26. Absorption and reflection spectra of a TlGaS2 crystal
27. Pankove · 1971
28. Optical properties of AlxGa1-xP (0 ≤ x ≤ 0.52) alloys10.1063/1.372011 ↗
29. Low temperature absorption edge and photoluminescence in TlIn(SxSe1-x)2 layered mixed crystals10.1016/j.physb.2017.11.042 ↗
30. Kinetics of radiative recombination in GaSe and influence of Cu doping on the luminescence spectra10.1103/PhysRevB.28.4620 ↗