Photoluminescence emission in the red band at low temperatures in type-island layers of the Al0.32Ga0.68 As/Al0.29Ga0.71As/GaAs structure obtained via liquid phase epitaxy, and its description by the mechanism of Stranski-Krastanov growth
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (36)
Show source-provided references
1. The advantages of transmitting light signals instead of electrical ones have led to ultrapure glass, semiconductor alloys only a few atoms thick and "nonlinear" materials that are now revolutionizing communications; Photonic Materials10.1038/scientificamerican1086-146 ↗
2. A review of the development in the field of fiber optic communication systems
3. Detection of optically injected spin polarized electrons in the L-valley of AlGaAs through polarization resolved photoluminescence excitation spectroscopy10.1016/j.jlumin.2019.05.036 ↗
4. Wavelength shift of selectively oxidized Al O-AlGaAs-GaAs distributed Bragg reflectors10.1109/68.593333 ↗
5. Doping and surface morphology of AlxGa1-xAs/GaAs grown at low temperature by liquid-phase epitaxy10.1016/S0022-0248(97)00511-3 ↗
6. Stringfellow · 1992 · 1
7. A brief review of growth techniques for obtaining of III-V semiconductor compounds
8. Growth and characterization of single heterostructure AlGaAs/InGaP red light emitting diodes by liquid phase epitaxy10.1063/1.347689 ↗
9. Highly reproducible high-index-contrast distributed Bragg reflectors with an oxidized digital-alloy AlGaAs
10. A review on materials for optoelectronics applications
11. Enhancement of photoluminescence of GaAsBi quantum wells by parabolic design of AlGaAs barriers
12. Comprehensive analysis of the composition determination in epitaxial AlxGa1-xAs films: a multitechnique approach
13. Refractive indices of MBE-grown AlxGa(1-x)As ternary alloys in the transparent wavelength región10.1063/5.0039631 ↗
14. Performance comparison of AlGaAs, GaAs and InGaP tunnel junctions for concentrated multijunction solar cells
15. The temperature dependence of the band gap shrinkage due to the electron-phonon interaction in AlxGa1-xAs10.1088/0953-8984/18/5/021 ↗
16. Spontaneous superlattice structures in AlxGa1-xAs/GaAs (1 0 0) grown by metalorganic vapor phase epitaxy10.1016/j.matlet.2017.08.133 ↗
17. Optical properties of AlxGa1-xAs nanowires with different composition in Al
18. Wurtzite AlGaAs nanowires
19. Reproducible liquid phase epitaxial growth of double heterostructure GaAs-AlxGa1-xAs laser diodes10.1063/1.1661601 ↗
20. Growth of zinc blende GaAs/AlGaAs heterostructure nanowires on Si substrate by using AlGaAs buffer layers10.1016/j.jcrysgro.2012.07.047 ↗
21. Solid-liquid equilibria for quaternary solid solutions involving compound semiconductors in the regular solution approximation10.1016/0022-3697(75)90032-3 ↗
22. Phase equilibria in III-V quaternary systems-application to AI-Ga-P-as10.1016/S0022-3697(74)80034-X ↗
23. Elyukhin · Sov. Phys. Tech. Phys. · 1980 · 25 · 536
24. InGaAs diodes for terahertz sensing-effect of molecular beam epitaxy growth conditions10.3390/s18113760 ↗
25. Validity of Vegard's rule for the lattice parameter and the stiffness elastic constant ratios of the AlGaAs ternary compound10.1016/S0038-1098(98)00374-3 ↗
26. Deviation of the AlGaAs lattice constant from Vegard's law10.1088/0022-3727/34/10/304 ↗
27. Mechanisms of stranski-krastanov growth10.1063/1.3679068 ↗
28. Temperature dependence of the energy gap in semiconductors10.1016/0031-8914(67)90062-6 ↗
29. Spontaneous superlattice structures in AlxGa1-xAs/GaAs (1 0 0) grown by metalorganic vapor phase epitaxy10.1016/j.matlet.2017.08.133 ↗
30. The temperature dependence of the band gap shrinkage due to the electron-phonon interaction in AlxGa1-xAs10.1088/0953-8984/18/5/021 ↗
31. Effect of growth temperature on surface morphology and optical properties of undoped Al0.32Ga0.68As
32. Photoluminescence of AlxGa1-xAs alloys10.1063/1.355769 ↗
33. Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics10.1016/j.apsusc.2021.151884 ↗
34. High-temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots10.1038/s41598-020-62248-9 ↗
35. UV laser controlled quantum well intermixing in InAlGaAs/GaAs heterostructures
36. Sanchez, and huiyun liu; self-catalyzed AlGaAs nanowires and AlGaAs/GaAs nanowire-quantum dots on Si substrates10.1021/acs.jpcc.1c03680 ↗