The effect of upper layer in optical capacitor based on SiO2/SiNx/SiO2/Si structure
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OpenAlex topics: Semiconductor materials and devices · Silicon Nanostructures and Photoluminescence · Nanowire Synthesis and Applications
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References (60)
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1. El-Kareh · 1995
2. Krimmel · 1991
3. Low-temperature and low-pressure silicon nitride deposition by ecr-pecvd for optical waveguides10.3390/app11052110 ↗
4. Silicon nitride photonic integration for visible light applications10.1016/j.optlastec.2018.10.059 ↗
5. Time-resolved photoluminescence in a-SiNx:H⟨Nd⟩ planar waveguides: evidence for stimulated emission10.1016/j.optmat.2004.08.013 ↗
6. Methods to achieve ultra-high quality factor silicon nitride resonators10.1063/5.0057881 ↗
7. Compact narrow-linewidth integrated laser based on a low-loss silicon nitride ring resonator10.1364/OL.42.004541 ↗
8. Hybrid integrated semiconductor lasers with silicon nitride feedback circuits10.3390/photonics7010004 ↗
9. Charge transport mechanism in the forming-free memristor based on silicon nitride10.1038/s41598-021-82159-7 ↗
10. Bipolar resistive switching with unidirectional selector function in nitride/oxide heterostructures10.1088/1361-6463/ab9ad9 ↗
11. Efficient silicon nitride SiN x :H antireflective and passivation layers deposited by atmospheric pressure PECVD for silicon solar cells10.1002/pip.3141 ↗
12. Enhanced light absorption of ultrathin crystalline silicon solar cells via the design of front nanostructured silicon nitride10.1557/s43578-020-00095-0 ↗
13. Evaluating the impact of SiNx thickness on lifetime degradation in silicon10.1109/JPHOTOV.2019.2896671 ↗
14. Silicon nitride and hydrogenated silicon nitride thin films: a review of fabrication methods and applications10.3390/ma14195658 ↗
15. SiO y N x/SiN x stack: a promising surface passivation layer for high-efficiency and potential-induced degradation resistant mc-silicon solar cells10.1002/pip.2803 ↗
16. Revised parametrization of the recombination velocity at SiO2/SiNx-passivated phosphorus-diffused surfaces10.1016/j.solmat.2021.111292 ↗
17. Improved Al 2 O 3 / SiN x and SiO 2 / SiN x stack passivation layer structure PERC sc‐silicon solar cells on mass production line10.1002/er.6201 ↗
18. Study about the effect of antireflection coating stacks (TiO2–SiO2/SiO2/SiNx) on the performances of multicrystalline silicon solar cells under the encapsulation condition10.1016/j.optmat.2020.110318 ↗
19. Luminescent devices based on silicon-rich dielectric materials10.5772/64894 ↗
20. Efficiency and reliability enhancement of silicon nanocrystal field-effect luminescence from nitride-oxide gate stacks10.1063/1.2939562 ↗
21. Radiation resistance of nanolayered silicon nitride capacitors10.1016/j.nimb.2020.03.010 ↗
22. Improvement of Hf-based metal/oxide/nitride/oxide/Si nonvolatile memory characteristics by Si surface atomically flattening10.35848/1347-4065/ab70ad ↗
23. Romanov I, Komarov FF, Parkhomenko I, Vlasukova L, Kovalchuk N, Mudryi A, et al. Photo- and Electroluminescence of Layered Structures Based on Silicon Oxide and Nitride Films. In: Pogrebnjak AD, Bondar O, editors., Singapore: Springer Singapore; 2020, p. 361–366. https://doi.org/10.1007/978-981-15-1742-6_35.10.1007/978-981-15-1742-6_35 ↗
24. Correlation between charge transport and electroluminescence properties of Si-rich oxide/nitride/oxide-based light emitting capacitors
25. 1998
26. Quality improvement in LPCVD silicon nitrides by anodic and rapid thermal oxidations10.1149/1.1664053 ↗
27. Conversion of silicon nitride into silicon dioxide through the influence of oxygen10.1016/0038-1101(71)90060-8 ↗
28. Thermal oxidation of silicon nitride and silicon oxynitride films10.1116/1.584769 ↗
29. Oxidation of silicon nitride prepared by plasma‐enhanced chemical vapor deposition at low temperature10.1063/1.112772 ↗
30. Surface oxidation of silicon nitride films10.1149/1.2132877 ↗
31. Oxidation of silicon nitride films in an oxygen plasma10.1063/1.369678 ↗
32. IR spectroscopic study of silicon nitride films grown at a low substrate temperature using very high frequency plasma-enhanced chemical vapor deposition10.4236/wjcmp.2016.64027 ↗
33. Roizin Y, Gritsenko V. ONO Structures and Oxynitrides in Modern Microelectronics: Material Science, Characterization and Application. Dielectric Films for Advanced Microelectronics, Chichester, UK: John Wiley & Sons, Ltd; n.d., p. 251–295. https://doi.org/10.1002/9780470017944.ch6.10.1002/9780470017944.ch6 ↗
34. Guo · 2004 · 745
35. Fabrication techniques for low-loss silicon nitride waveguides
36. Raman study of light-emitting SiNx films grown on Si by low-pressure chemical vapor deposition10.1016/j.tsf.2015.03.003 ↗
37. Luminescence of silicon nitride films implanted with nitrogen ions10.1088/2053-1591/aad7a6 ↗
38. SiNx films and membranes for photonic and MEMS applications10.1007/s10854-019-01164-9 ↗
39. Filmmetrics Reflectance calculator n.d. https://www.filmetrics.com/reflectance-calculator (accessed March 9, 2022).
40. Fourier transform infrared spectroscopy of annealed silicon-rich silicon nitride thin films10.1063/1.3021158 ↗
41. SiO x N y films deposited by remote plasma enhanced chemical vapor deposition using SiCl 410.1116/1.580085 ↗
42. Characterisation of the silicon nitride thin films deposited by plasma magnetron10.1002/sia.2730 ↗
43. Deposition of silicon nitride thin films by RF magnetron sputtering: a material and growth process study10.1016/j.optmat.2011.09.012 ↗
44. Optical and structural properties of silicon nitride thin films prepared by ion-assisted deposition10.1016/j.optmat.2010.01.032 ↗
45. Comparative investigation of hydrogen bonding in silicon based PECVD grown dielectrics for optical waveguides10.1016/j.optmat.2003.12.004 ↗
46. Spectroscopic ellipsometry and FTIR characterization of annealed SiOxNy:H films prepared by PECVD10.1016/j.optmat.2021.111693 ↗
47. Strong white light emission from SiCxOy films grown by HFCVD technique10.1016/j.optmat.2019.109551 ↗
48. The role of operations after the deposition on the performance of SiO films in optoelectronics devices10.1016/j.optmat.2015.04.023 ↗
49. Thermo-optical properties of high-refractive-index plasma-deposited hydrogenated amorphous silicon-rich nitride films on glass10.1364/OME.396150 ↗
50. A study of thin silicon dioxide films using infrared absorption techniques10.1063/1.331239 ↗
51. Interfacial oxide determination and chemical/electrical structures of HfO2/SiOx/Si gate dielectrics10.1016/j.sse.2004.05.070 ↗
52. Study of structure and quality of different silicon oxides using FTIR and Raman microscopy
53. Oxynitride films formed by low energy NO + implantation into silicon10.1063/1.117169 ↗
54. Investigation on optical and microstructural properties of photoluminescent LPCVD SiOxNy thin films10.1016/S0925-3467(01)00038-6 ↗
55. Quantitative Auger depth profiling of LPCVD and PECVD silicon nitride films10.1007/BF00572315 ↗
56. Simple expressions for predicting the effect of volume and interface absorption and of scattering in high-reflectance or antireflectance multilayer coatings10.1364/JOSA.70.000268 ↗
57. Origin of visible photoluminescence from Si-rich and N-rich silicon nitride films10.1016/j.tsf.2017.02.027 ↗
58. Enhancement of photoluminescence signal from ultrathin layers with silicon nanocrystals10.1063/1.3682537 ↗
59. Conversion of silicon nitride into silicon dioxide through the influence of oxygen10.1016/0038-1101(71)90060-8 ↗
60. Oxidation behavior of silicon nitride fibers obtained from polycarbosilane fibers: via electron beam irradiation curing10.1039/C7RA09056K ↗