Discrete energy states induced broadband emission from self-assembly InGaN quantum dots
Source abstract
Abstract
Abstract Light-emission contributed from discrete energy levels of self-assembly InGaN quantum dots is explored to fabricate broadband light-emitting diodes (LEDs). A series of InGaN quantum dots samples are self-assembly grown on sapphire substrate by metal-organic vapor phase epitaxy. Emission from the discrete energy states of the InGaN quantum dots is detected by micro-zone photoluminescence under cryogenic temperature. The peaks assignments are also verified by theoretical simulation. A green LED incorporating InGaN multi-quantum dots as active medium is fabricated, demonstrating a broader emission than the referred multi-quantum wells LED. It suggests quantum dots be of great potential to improve the color-rendering index of white LEDs.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Metal and Thin Film Mechanics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (33)
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1. Luminescence from excited states in strain-induced InGaAs quantum dots10.1103/PhysRevB.51.13868 ↗
2. State filling and time-resolved photoluminescence of excited states in InxGa1-xAs/GaAs self-assembled quantum dots10.1103/PhysRevB.54.11548 ↗
3. Emission from discrete levels in self-formed InGaAs/GaAs quantum dots by electric carrier injection: influence of phonon bottleneck10.1063/1.116681 ↗
4. Excited-state radiative lifetimes in self-assembled quantum dots obtained from state-filling spectroscopy10.1103/PhysRevB.59.7624 ↗
5. Manulating the energy levels of semiconductor quantum dots10.1103/PhysRevB.59.15368 ↗
6. Probing the excitonic states of site-controlled GaN nanowire quantum dots10.1021/nl503949u ↗
7. Observations of Rabi oscillations in a nonpolar InGaN quantum dot10.1063/1.4886961 ↗
8. Photoluminescence excitation spectroscopy on single GaN quantum dots10.7567/APEX.6.012102 ↗
9. Photonic quantum technologies10.1038/nphoton.2009.229 ↗
10. Electrically pumped single-photon emission at room temperature from a single InGaN/GaN quantum dot10.1063/1.4897640 ↗
11. Single photons from a hot solid-state emitter at 350 K10.1021/acsphotonics.6b00112 ↗
12. Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting
13. Theory of reduced built-in polarization field in nitride-based quantum dots10.1103/PhysRevB.82.033411 ↗
14. Effect of InGaN quantum dot size on the recombination process in light-emitting diodes10.1063/1.2951607 ↗
15. InGaN/GaN multi-quantum dot light-emitting diodes10.1016/j.jcrysgro.2003.08.083 ↗
16. InGaN/GaN self-organized quantum dot green light emitting diodes with reduced efficiency droop
17. Blue–green–red LEDs based on InGaN quantum dots grown by plasma-assisted molecular beam epitaxy10.1002/pssa.200674834 ↗
18. InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers10.1186/1556-276X-7-617 ↗
19. Generation of amber III-nitride based light emitting diodes by indium rich InGaN quantum dots with InGaN wetting layer and AlN encapsulation layer10.1063/1.3499618 ↗
20. Red and near-infrared III-nitride quantum dot lasers10.1109/JSTQE.2017.2754368 ↗
21. InGaN∕GaN multiple quantum wells grown on microfacets for white-light generation10.1063/1.3049607 ↗
22. Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography10.1063/1.4869336 ↗
23. Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon10.1088/0957-4484/22/44/445202 ↗
24. Quantum dots excited InGaN/GaN phosphor-free white LEDs
25. High color-definition lighting with broadband LEDs10.1364/OPN.24.2.000026 ↗
26. Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy10.1063/1.3590151 ↗
27. Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots10.1038/srep35217 ↗
28. Low threshold continuous-wave lasing of yellow-green InGaN-QD vertical-cavity surface-emitting lasers10.1364/OE.24.015546 ↗
29. Anomalous temperature dependence of photoluminescence in self-assembled InGaN quantum dots10.1063/1.4754533 ↗
30. Inhibited carrier transfer in ensembles of isolated quantum dots10.1103/PhysRevB.60.16647 ↗
31. Ensemble interaction in strained semiconductor quantum dots10.1103/PhysRevB.60.R8517 ↗
32. Time-resolved dynamics in single InGaN quantum dots10.1063/1.1614831 ↗
33. APSYS Device Simulator, Software Package, Crosslight Software Inc., Vancouver, BC, Canada.