journal article·2001-02

Anti-phase domain boundaries in ZnGeP2 (ZGP)

Y. Shimony, R. Fledman, I. Dahan, G. Kimmel

Optical Materials· Volume 16· Issue 1-2
Publisher page

Abstract

Abstract Coherently oriented cubic defects were recently reported to exist within the tetragonal lattice of zinc–germanium–phosphide, ZnGeP2 (ZGP). X-ray diffraction utilizing whole pattern optimization (Rietveld method) and line-profile-fitting (LPF) enabled us to identify these defects. In the present research, transmission electron microscopy (TEM) was used for direct observation of these defects. The bright field and dark field TEM images of the ZGP foil indicate the existence of anti-phase domain boundaries (APB). Electron diffraction patterns clearly reveal two coherently oriented entities, one of a tetragonal symmetry in accordance with the chalcopyrite lattice, the other however of a cubic symmetry. This confirms our former finding of the existence of coherently oriented cubic defects in as-grown chalcopyrite ZGP crystal.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Semiconductor materials and interfaces · Thermography and Photoacoustic Techniques

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (22)

Show source-provided references
1. Viapolin · Izv. Acad. Nauk SSSR, Neorg. Mater. · 1972 · 8 · 947
2. L. Shay, J.H. Wernick, in: Ternary Chalcopyrite Semiconductors Growth Electronic Properties and Applications, Pergamon Press, New York, 197510.1016/B978-0-08-017883-7.50012-3 ↗
3. Binsma · Phys. Stat. Sol. (a) · 1981 · 63 · 59510.1002/pssa.2210630226 ↗
4. Vaipolin · Phys. Stat. Sol. · 1968 · 29 · 43510.1002/pssb.19680290144 ↗
5. Rakowsky · Appl. Phys. Lett. · 1994 · 64 · 161510.1063/1.111855 ↗
6. Shimony · J. Cryst. Growth · 1999 · 198–199 · 58310.1016/S0022-0248(98)01232-9 ↗
7. Masumoto · J. Phys. Chem. Solids · 1966 · 27 · 193910.1016/0022-3697(66)90124-7 ↗
8. S. Fiechter, R.H. Castleberry, M. Angelov, K.J. Bachmann, in: M.O. Manasreh, T.M. Myers, F.H. Julien (Eds.), Infrared Applications of Semiconductors – Materials, Processing and Devices, MRS Symposium Proceedings, vol. 450, MRS 1996 Fall Meeting, Boston, 2–6 December 1996, p. 31510.1557/PROC-450-315 ↗
9. F.K. Hopkins, Laser Focus World, July 1995, p. 87
10. Bliss · J. Cryst. Growth · 1994 · 137 · 194510.1016/0022-0248(94)91263-7 ↗
11. Hobgood · J. Appl. Phys. · 1993 · 73 · 403010.1063/1.352870 ↗
12. Gorbon · Sov. Phys. Semicond. · 1984 · 18 · 567
13. Averkieva · Phys. Status. Solidi A · 1977 · 39 · 45310.1002/pssa.2210390211 ↗
14. Rakowsky · Appl. Phys. Lett. · 1994 · 64 · 161510.1063/1.111855 ↗
15. Hallliburton · Appl. Phys. Lett. · 1995 · 66 · 267010.1063/1.113120 ↗
16. Sodeika · Phys. Status Solidi A · 1982 · 69 · 49110.1002/pssa.2210690208 ↗
17. Rud · Sov. Tech. Phys. Lett. · 1981 · 7 · 72
18. M.H. Rakowsky, W.J. Lauderdale, R.A. Mantz, R. Pandey, P.J. Drevinsky, D.C. Jacobson, D.E. Luzzi, T.F. Heinz, M. Iwaki (Eds.), Beam–Solid Interactions for Materials Synthesis and Characterization Symposium, Pittsburgh, PA, USA, 1995, p. 735
19. Shimony · Opt. Mater. · 1999 · 13 · 10110.1016/S0925-3467(99)00018-X ↗
20. Lind · J. Chem. Phys. · 1973 · 58 · 35710.1063/1.1678930 ↗
21. Edington · 1976
22. Williams · 1996