journal article·2015-09

808-nm diode-pumped dual-wavelength passively Q-switched Nd:LuLiF4 laser with Bi-doped GaAs

S.X. Li, T. Li, D.C. Li, S.Z. Zhao, G.Q. Li, Y. Hang, P.X. Zhang, X.Y. Li, H. Qiao

Optical Materials· Volume 47
Publisher page

Abstract

Abstract Diode-pumped CW and passively Q-switched Nd:LuLiF 4 lasers with stable, synchronous dual-wavelength operations near 1047 and 1053 nm were demonstrated for the first time. The maximal CW output power of 821 mW was obtained at an incident pump power of 6.52 W. Employing high quality Bi-doped GaAs as saturable absorber, stable dual-wavelength Q-switched operation was realized. Under 6.52 W incident pump power, the minimal pulse duration of 1.5 ns, the largest single pulse energy of 11.32 μJ, and the highest peak power of 7.25 kW were achieved.
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Research context

OpenAlex topics: Solid State Laser Technologies · Advanced Fiber Laser Technologies · Photorefractive and Nonlinear Optics

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