Resonant optical spectroscopy of Er3+ centers in hexagonal GaN-analysis of symmetry
Source abstract
Abstract
Abstract In this paper the site symmetry and site location of Er 3+ ions in hexagonal GaN determined basing on high resolution resonant optical spectroscopy is reported. A single center is separated from the photoluminescence excitation spectra to the 4 I 11/2 state of Er 3+ and the energy levels of this center were fitted in point charge approximation. From the values of crystal field parameters we conclude that Er occupies a substitutional lattice site in the crystal. This work is a continuation of our previous results for the 4 I 9/2 state.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Silicon Nanostructures and Photoluminescence · Ga2O3 and related materials
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References (11)
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