Chemical analysis of interface area in DLC/Si systems

Abstract Diamond-like carbon (DLC) films’ properties depend on their chemical composition, influenced by deposition parameters. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) and auger electron spectroscopy (AES) have been used in this study to analyze the chemical composition of DLC films deposited on flat Si substrates using the radio frequency plasma chemical vapor deposition (RF PCVD) method. Carbon, hydrogen and oxygen have been detected in the investigated DLC films. Additionally, high intensity of SiC, Fe and Cr has been detected in the interface region of the DLC and Si substrate, the metallic ions probably originating from metal elements of the RF PCVD reactor chamber.