Luminescence properties of two-photon excited silicon nanocrystals
Source abstract
Abstract
Abstract Visible photoluminescence (PL) from silicon nanocrystals (NCs) in porous silicon (PSi) at two-photon excitation (two-photon absorption) has been studied. For resonant excitation at low temperatures the PL response near to the excitation energy differs significantly from that observed at one-photon excitation. Contrary to one-photon excitation no spectral gap between the excitation energy and the onset of the two-photon excited PL is observed. This is explained in the framework of selection rules for dipole allowed and forbidden optical transitions in silicon NCs. At room temperature one- and two-photon excitation results in a similar PL spectra. However, the degree of linear polarization ( ρ ) is significantly larger for the later one. This enhancement of ρ is a consequence of the dielectric nanostructure of PSi and the excitation of ellipsoidal NCs with linearly polarized light by a higher-order, nonlinear, process.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence · Nanowire Synthesis and Applications · Quantum Dots Synthesis And Properties
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References (5)
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1. Kovalev · Appl. Phys. Lett. · 1995 · 67 · 158510.1063/1.114947 ↗
2. Diener · Appl. Phys. Lett. · 1999 · 74 · 335010.1063/1.123341 ↗
3. Diener · Phys. Rev. B · 1998 · 58 · 1262910.1103/PhysRevB.58.12629 ↗
4. Shen · 1984
5. Cullis · J. Appl. Phys. · 1997 · 82 · 90910.1063/1.366536 ↗