High-quality GaAs-related lateral junctions on Si by conformal growth

Abstract Conformal growth consists in a confined lateral selective epitaxy of III–V materials on silicon from III–V oriented seeds, the vertical growth being stopped by an overhanging dielectric mask. Low-dislocation density (a few 10 4 cm −2 ) GaAs conformal layers can then be achieved exhibiting vertical {1 1 0} or inclined {1 1 1} mono-facetted growth fronts. New n (Si) and p (Zn) doped, laterally modulated GaAs structures were grown on Si by hydride vapour phase epitaxy (HVPE) using the conformal growth technique. The doping distribution was studied using spatially resolved cathodoluminescence (CL) and Micro-Raman spectroscopy. The feasibility of the conformal growth technique for selective doping was demonstrated and a first lateral n/p junction was characterised.