Photoluminescence of Ga0.94In0.06As0.13Sb0.87 solid solution lattice matched to InAs

Abstract The lattice matched Ga0.94In0.06As0.13Sb0.87 quaternary solid solutions were grown by liquid phase epitaxy on (1 0 0) oriented InAs substrates from In rich melt. The p-type GaIn0.06As0.13Sb layers were intentionally undoped and their hole concentration was about p∼5×1016 cm−3, while n-type GaIn0.06As0.13Sb layers were slightly doped with Te and their electron concentration was about n∼1017 cm−3. Photoluminescence spectra exhibit single unresolved emission band in the spectral region from 0.65 to 0.8 eV for both types. Spectra were decomposed to elementary Gaussian components. The main mechanisms of radiative recombination were determined for both types of material.