journal article·2006-09

Color centers and charge state recharge in γ-irradiated Yb:YAP

Yongjun Dong, Guoqing Zhou, Jun Xu, Guangjun Zhao, Fenglian Su, Liangbi Su, Hongjun Li, JiLiang Si, Xiaobo Qian, Xiaoqing Li, Jun Shen

Optical Materials· Volume 28· Issue 12
Publisher page

Abstract

Gamma-ray irradiation induced color centers and charge state recharge of impurity and doped ion in 10 at.% Yb:YAP have been studied. The change in the additional absorption (AA) spectra is mainly related to the charge exchange of the impurity Fe2+, Fe3+ and Yb3+ ions. Two impurity color center bands at 255 and 313 nm were attributed to Fe3+ and Fe2+ ions, respectively. The broad AA band centered at 385 nm may be associated with the cation vacancies and F-type center. The transition Yb3+ -> Yb2+ takes place in the process of gamma-irradiation. Oxygen annealing and gamma-ray irradiation lead to an opposite effect on the absorption properties of the Yb:YAP crystal. In the air annealing process, the transition Fe2+ -> Fe3+ and Yb2+ -> Yb3+ take place and the color centers responsible for the 385 nm band was destroyed. (c) 2005 Elsevier B.V. All rights reserved.
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OpenAlex topics: Solid State Laser Technologies · Luminescence Properties of Advanced Materials · Advanced Fiber Laser Technologies

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