Study on photodamage of Mg:Ga:LiNbO3 crystal wave-guide substrate

Abstract MgO and Ga 2 O 3 were doped in LiNbO 3 (LN) to grow Mg:Ga:LN crystals. The OH − absorption spectra and photoredamage resistance threshold of Mg:Ga:LN were measured. The mechanism of the shift of OH − absorption peak was investigated. LN crystal was manufactured into proton transfer wave-guide substrate. By using the holograph method, the photodamage resistance ability of wave-guide substrate was measured. It was found that the photodamage resistance ability of Mg:Ga:LN wave-guide substrate was much higher than that of LN wave-guide substrate.