Optical and structural investigation of InAs/AlSb/GaSb heterostructures

Abstract We report on the growth and characterisation of non-intentionally doped InAs/AlSb strained multiple quantum wells (MQWs), grown on GaSb substrates by molecular beam epitaxy (MBE). The structural characterisation is performed using X-ray reflectometry (XRR) as a complementary tool to high resolution X-ray diffraction (HRXRD) experiments. For the first time in this material system, optical characterisation by photo-induced absorption spectroscopy have been carried out. A strong e 1 → e 2 p-polarised intersubband absorption is observed with a full width at half maximum of 11 meV at 77 K, showing the good quality of the material.