Lateral growth and optical properties of ZnO microcrystal on sapphire substrate
Source abstract
Abstract
Abstract Without catalysis, hexagonal zinc oxide (ZnO) microcrystals were successfully grown on (0 0 0 1) sapphire substrate in a home made chemical vapor deposition system under atmospheric pressure. A rapid lateral growth at rate of 15 μm/h and a dense growth of ZnO crystals were realized in the growth regions of 800 and 850 °C, respectively. The growth mechanisms were explained similarly with the selective epitaxy. The high quality of the crystals was attested by the X-ray diffraction pattern, Raman scattering and temperature dependent photoluminescence. These results showed the potential of lateral growth ZnO crystals at low cost.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Ga2O3 and related materials · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (28)
Show source-provided references
1. Sauer · Physica B · 2003 · 340 · 20510.1016/j.physb.2003.09.029 ↗
2. Ye · Opt. Mater. · 2012 · 34 · 75310.1016/j.optmat.2011.10.013 ↗
3. Chen · Mater. Sci. Eng., B · 2012 · 177 · 19010.1016/j.mseb.2011.12.001 ↗
4. Zhang · Adv. Mater. · 2009 · 21 · 276710.1002/adma.200802686 ↗
5. Lupan · Opt. Mater. · 2011 · 33 · 91410.1016/j.optmat.2011.01.024 ↗
6. Zhang · Superlattices Microst. · 2010 · 48 · 19810.1016/j.spmi.2010.06.001 ↗
7. Calestani · J. Mater. Chem. · 2011 · 21 · 1553210.1039/c1jm12561c ↗
8. Wang · Appl. Phys. Lett. · 2010 · 97 · 15190810.1063/1.3502607 ↗
9. Khranovskyy · J. Cryst. Growth · 2010 · 312 · 32710.1016/j.jcrysgro.2009.09.057 ↗
10. Wessler · J. Cryst. Growth · 2002 · 242 · 28310.1016/S0022-0248(02)01386-6 ↗
11. Chen · Thin Solid Films · 2010 · 518 · 552010.1016/j.tsf.2010.04.054 ↗
12. Dai · Mater. Sci. Eng., B · 2006 · 127 · 28010.1016/j.mseb.2005.10.024 ↗
13. Ehrentraut · Prog. Cryst. Growth Charact. Mater. · 2006 · 52 · 28010.1016/j.pcrysgrow.2006.09.002 ↗
14. Reynolds · J. Appl. Phys. · 2004 · 95 · 480210.1063/1.1691186 ↗
15. Udono · J. Cryst. Growth · 2008 · 310 · 182710.1016/j.jcrysgro.2007.11.226 ↗
16. Santailler · J. Cryst. Growth · 2010 · 312 · 341710.1016/j.jcrysgro.2010.08.046 ↗
17. Takahashi · Jpn. J. Appl. Phys. · 1999 · 38 · L45410.1143/JJAP.38.L454 ↗
18. Li · Mater. Lett. · 2011 · 65 · 80910.1016/j.matlet.2010.12.027 ↗
19. Yu · J. Cryst. Growth · 2002 · 235 · 4010.1016/S0022-0248(01)01774-2 ↗
20. Yang · J. Cryst. Growth · 2009 · 311 · 291410.1016/j.jcrysgro.2009.01.064 ↗
21. Wang · J. Lumin. · 2011 · 131 · 108210.1016/j.jlumin.2011.01.026 ↗
22. Yao · 1995
23. Shuang · Mater. Sci. Semicond. Process. · 2007 · 10 · 9710.1016/j.mssp.2007.04.002 ↗
24. Peng · Appl. Surf. Sci. · 2010 · 256 · 681410.1016/j.apsusc.2010.04.094 ↗
25. Li · Appl. Surf. Sci. · 2010 · 256 · 169810.1016/j.apsusc.2009.09.097 ↗
26. Zhang · J. Appl. Phys. · 2006 · 99 · 06370910.1063/1.2183354 ↗
27. Jacopin · Nanoscale Res. Lett. · 2011 · 6 · 50110.1186/1556-276X-6-501 ↗
28. Sentosa · J. Cryst. Growth · 2011 · 319 · 810.1016/j.jcrysgro.2011.01.029 ↗