journal article·2003-07

Research on the Mn-implanted GaN with ferromagnetism at room temperature

J. Xu, J. Li, R. Zhang, X.Q. Xiu, D.Q. Lu, H.Q. Yu, S.L. Gu, B. Shen, Y. Shi, Y.D. Ye, Y.D. Zheng

Optical Materials· Volume 23· Issue 1-2
Publisher page

Abstract

The Mn-implanted GaN with ferromagnetism at room temperature has been prepared successfully. The optical and structural properties of Mn-implanted GaN films have been investigated. The films studied were grown by metal organic chemical vapor deposition, with Mn implanted in 150 keV, which can offer many distinguished advantages compared with other doping methods. A new energy band with a minimum at 2.9 eV in the reflectance spectra has been observed. The yellow band emission was greatly decreased according to the result of photoluminescence. The results of vibrating sample magnetometer experiment proved the ferromagnetic properties of Mn-doped GaN at room temperature.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: ZnO doping and properties · GaN-based semiconductor devices and materials · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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