Study of plasma etching of β-SiC thin films grown on Si-substrate

Abstract Plasma etching (PE) of β-SiC single crystal thin films produced via epitaxial growth on Si-substrate has been performed with different etching gases such as CF4, SF6, CF4 + O2, and SF6 + O2 mixtures. Experimental results using different etching gases are compared with respect to PE process condition, etching mechanism and products, surface states and Auger energy spectra analyses.