Investigation of temperature dependence of photoluminescence in RexY2−xSiO5

Abstract The photoluminescent properties of RexY2−xSiO5 (Re=Eu3+, Ce3+, Sm3+, Tb3+ and Tm3+) and some of their combinations were systematically studied from room temperature to 573 K. It was found that the temperature dependence of the photoluminescence in the singly doped Y2SiO5 (YSO) strongly depended on the activator itself and the interaction between the activator and the host. The thermal quenching in the doubly doped YSO was related to the trap type of doping ions. This study shows a direct relationship between the thermal quenching and the microstructure, which is very useful in the design and development of photoluminescent materials used at elevated temperature.