Refractive index profiles of planar optical waveguides in β-BBO produced by silicon ion implantation

Abstract The planar waveguides have been fabricated in z-cut beta barium metaborate crystals by 2.8 MeV Si+ ion implantation with doses of 1 × 1015 and 3 × 1015 ions/cm2 at room temperature. The waveguides were characterized by the prism-coupling method. The refractive index profiles were reconstructed using reflectivity calculation method. It is found that relatively large positive changes of extraordinary refractive indices happen in the guiding regions, and the negative changes of ordinary refractive indices happen at the end of the track. TRIM’98 (transport of ions in matter) code was used to simulate the damage profile in β-BBO by 2.8 MeV Si+ ion implantation.