Photoluminescence enhancement in impurity doped β-FeSi2
Source abstract
Abstract
Abstract Effects of impurity-doping on photoluminescence (PL) properties of ion-beam synthesized (IBS) β-FeSi2 have been investigated. The Al- and B-doped β-FeSi2 showed increase of both PL intensity and activation energy (Ea) for non-radiative recombination path. On the contrary, the Mn and Co doping reduced the PL intensity and Ea. We found that the doping of Al and B atoms which occupy the Si sites in β-FeSi2 is a technique to enhance the 1.54 μm photoluminescence.
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Research context
OpenAlex topics: Semiconductor materials and interfaces · Integrated Circuits and Semiconductor Failure Analysis · Semiconductor materials and devices
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