(InGa)(NAs)/GaAs structures emitting in 1–1.6 μm wavelength range

Abstract The MOVPE growth of (InGa)(NAs)/GaAs structures with room temperature photoluminescence (RTPL) in 1–1.59 μm range is presented. Infinite threshold current densities of 0.095, 1.22 and 2.3 kA/cm 2 at 1.18, 1.22 and 1.24 μm emission wavelengths, for the In 0.35 Ga 0.65 N y As 1− y /GaAs quantum well (QW) laser diodes with 0%, 0.4% and 0.5% of nitrogen, respectively, were obtained. Characteristic temperature ( T 0 ) values of 82, 117 and 102 K were determined for as-cleaved lasers in the 20–80°C temperature range.