A porous silicon LED based on a standard BCD technology

Abstract A new process, compatible with an industrial Bipolar + CMOS + DMOS (BCD) technology, has been developed for the fabrication of efficient porous silicon based LEDs. The electrical contact is fabricated using a n + polysilicon layer on double n + /p implant before the porous silicon (PoSi) formation, achieving a high current injection. The anodisation is performed as the last step of the process, thus reducing potential incompatibilities with industrial processes. The fabricated devices show yellow–orange electroluminescence (EL), visible with the naked eye.