journal article·2024-03

A comparative study on the effects induced following xenon ion implantation at high energies on the electrical, morphological and optical properties of CuInSe2 monocrystalline

Amar Gamoura, Fatima Zohra Satour, Ameur Zegadi, Ahmed Zouaoui, Naceredine Bourouba

Optical Materials· Volume 149
Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Semiconductor materials and interfaces

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (43)

Show source-provided references
1. Cd-Free Cu(In,Ga)(Se,S)2 thin-film solar cell with record efficiency of 23.35%10.1109/JPHOTOV.2019.2937218 ↗
2. Solar cell efficiency tables (version 62)10.1002/pip.3726 ↗
3. Radiation resistance of thin-film solar cells for space photovoltaic power10.1016/0379-6787(91)90103-V ↗
4. RBS-channeling study of radiation damage in Ar+ implanted CuInSe2 crystals10.1116/1.4961882 ↗
5. Study of the radiation damage caused by ion implantation in ZnO and its relation to magnetism10.1016/j.nimb.2019.06.013 ↗
6. Electronic defects in Cu(In,Ga)Se2: towards a comprehensive model
7. What limits the efficiency of chalcopyrite solar cells?10.1016/j.solmat.2010.12.014 ↗
8. Defect physics of the CuInSe2 chalcopyrite semiconductor10.1103/PhysRevB.57.9642 ↗
9. Defects in semiconductors: some fatal, some vital10.1126/science.281.5379.945 ↗
10. Introduction: ion implantation technology10.1557/s43580-023-00524-2 ↗
11. Influence of the charge state of xenon ions on the depth distribution profile upon implantation into silicon10.1134/S1063782619080062 ↗
12. Zn‐ion‐implantation profiles in CuInSe2 by Auger electron spectroscopy10.1063/1.323362 ↗
13. Electrical Properties of CuInSe2 single crystals implanted with xenon10.1002/crat.2170280221 ↗
14. Tomlinson · J. Electron. Mater. · 1991 · 20 · 65910.1007/BF02654535 ↗
15. Homojunction diode of CuInSe2 thin film fabricated by nitrogen implantation10.1063/1.355296 ↗
16. Influence of proton implantation on the properties of CuInSe2 single crystals (II)10.1002/crat.2170290328 ↗
17. Hydrogen in CuInSe210.1016/S0022-3697(03)00100-8 ↗
18. Proton irradiation damages in CuInSe2 thin film solar cell materials by a piezoelectric photothermal spectroscopy10.1016/j.sse.2004.05.018 ↗
19. Optical properties of xenon implanted CuInSe2 by photoacoustic spectroscopy10.1016/j.jlumin.2012.02.009 ↗
20. Xe irradiation-induced defects in CuInSe2 by phase resolved photoacoustic spectroscopy10.1016/j.mseb.2012.01.018 ↗
21. Ion channeling study of hydrogenation induced damage in CuInSe2 crystals10.1016/0168-583X(94)95734-7 ↗
22. An electron microscope study of near-surface damage caused by Xe and Ne ion implantation in CuInSe2 single crystals10.1016/0168-583X(94)95419-4 ↗
23. Itoh · 1989
24. 2013
25. Rosencwaig · 1980
26. Photothermal, photocarrier, and photoluminescence phenomena in semiconductors studied using spectrally resolved modulated infrared radiometry: physics and applications10.1063/1.5114719 ↗
27. Photoacoustic spectroscopy use in the analysis of ion implanted CuInSe2 single crystals10.1063/1.1145355 ↗
28. Spectral absorption coefficient extraction of an unknown layer from photoacoustic measurements of multilayered semiconductors10.1016/j.infrared.2020.103348 ↗
29. J.F. Ziegler and J.P. Biersack, SRIM-2013, http://srim.org..
30. Fabrication of CuInSe2 single crystals using melt-growth techniques10.1016/0379-6787(86)90072-4 ↗
31. Near-infrared optical analysis of CuInSe2(1±x) crystals using transmission, photoacoustic and transmission-photoacoustic spectroscopies10.1016/j.infrared.2019.05.007 ↗
32. A generalized approach to the defect chemistry of ternary compounds10.1524/zpch.1978.110.1.017 ↗
33. A TEM and EDX study of cavities formed in tin by xenon ion implantation10.1016/0168-583X(90)90584-H ↗
34. Ion implantation damage in silicon
35. STM observation of ‘craters’ on graphite surface induced by single ion implantation10.1016/S0169-4332(96)00478-3 ↗
36. Complex crater formation on silicon surfaces by low-energy Arn+ cluster ion implantation10.1016/j.susc.2004.06.082 ↗
37. An optical absorption properties investigation of CuInSe2 by a simultaneous photoacoustic-photoconductivity measuring technique10.1016/j.infrared.2020.103194 ↗
38. Photoacoustic spectroscopy of defect states in CuInSe2 single crystals10.1016/0038-1098(92)90657-U ↗
39. On measuring impurity absorption spectra of semiconductors by photoacoustic spectroscopy10.1002/crat.2170280112 ↗
40. Pankove · 1971
41. Optical properties of copper indium diselenide near the fundamental absorption edge10.1103/PhysRevB.33.7160 ↗
42. Detailed absorption analysis from photoacoustic measurements of post-annealed CuInSe2 in various environments10.1016/j.infrared.2018.11.035 ↗
43. Optical properties of amorphous CuInSe210.1016/0038-1098(82)90224-1 ↗