Temperature dependence of nonradiative recombination processes in UV-B AlGaN quantum well revealed by below-gap excitation light
Source abstract
Abstract
Abstract Nonradiative recombination (NRR) processes through defect states and their temperature dependence in UV-B AlGaN MQW sample on sapphire substrate grown by MOCVD technique have been studied by photoluminescence (PL) spectroscopy. We detected NRR centers by adding a below-gap excitation light with photon energies from 0.93 eV to 1.46 eV on an above-gap excitation light of 4.66 eV. All the BGE energies decreased PL intensity at 25 K, and the most-distinct quenching is observed by 1.27 eV BGE at the same BGE photon number density. The temperature-dependent PL intensity for the BGE energy of 1.27 eV is interpreted by three NRR centers. The one-level model dominates over that of two-level model in the temperature range 58 K
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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