journal article·2022-09

Optical properties of LMBE grown c-axis oriented GaN thin films using Surface Plasmon Resonance technique

Gunjan Yadav, Reema Gupta, Anjali Sharma, Monika Tomar

Optical Materials· Volume 131
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OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Semiconductor materials and devices

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References (57)

Show source-provided references
1. GaN in different dimensionalities: properties, synthesis, and applications10.1016/j.mser.2019.04.001 ↗
2. Nitride LEDs and lasers with buried tunnel junctions10.1149/2.0412001JSS ↗
3. Electroluminescence study of InGaN/GaN QW based p-i-n and inverted p-i-n junction based short-wavelength LED device using laser MBE technique10.1016/j.optmat.2022.112149 ↗
4. Double Schottky metal–semiconductor–metal based GaN photodetectors with improved response using laser MBE technique10.1557/s43578-021-00467-0 ↗
5. Droop-free, reliable, and high-power InGaN/GaN nanowire light-emitting diodes for monolithic metal-optoelectronics10.1021/acs.nanolett.6b01945 ↗
6. Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures10.1117/1.OE.53.10.107106 ↗
7. Effect of nitridation temperature on formation and properties of GaN nanowall networks on sapphire (0 0 0 1) grown by laser MBE10.1016/j.mseb.2018.10.009 ↗
8. Growth of hierarchical GaN nanowires for optoelectronic device applications10.1117/1.JPE.7.016001 ↗
9. Investigation of the absorption coefficient, refractive index, energy band gap, and film thickness for Al0. 11Ga0. 89N, Al0. 03Ga0. 97N, and GaN by optical transmission method
10. Determination of the refractive indices of AlN, GaN, and Al x Ga 1− x N grown on (111) Si substrates10.1063/1.1563293 ↗
11. Optical properties of GaN film grown by metalorganic chemical vapor deposition10.1116/1.580400 ↗
12. Epitaxial growth of GaN nanostructure by PA-MBE for UV detection application10.1016/j.apsusc.2018.01.287 ↗
13. High-quality AlN template grown on a patterned Si(111) substrate10.1016/j.jcrysgro.2016.12.100 ↗
14. Molecular beam epitaxy growth of GaN, AlN and InN
15. Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111)10.1063/1.2715119 ↗
16. Influence of GaN/AlGaN/GaN (0001) and Si (100) substrates on structural properties of extremely thin MoS2 films grown by pulsed laser deposition10.1016/j.apsusc.2016.06.038 ↗
17. In fl uence of growth temperature on laser molecular beam epitaxy and properties of GaN layers grown on c-plane sapphire10.1016/j.optmat.2017.01.053 ↗
18. Growth of N-polar GaN by ammonia molecular beam epitaxy10.1016/j.jcrysgro.2017.10.033 ↗
19. HVPE-GaN growth on GaN-based advanced substrates by smart Cut™10.1016/j.jcrysgro.2016.08.060 ↗
20. Effect of carbon on the magnetic properties of Dy-implanted GaN fi lms10.1016/j.jallcom.2018.05.265 ↗
21. Electrical transport properties of individual gallium nitride nanowires synthesized by chemical-vapor-deposition10.1063/1.1478158 ↗
22. Controlled growth of GaN nanowires by pulsed metalorganic chemical vapor deposition10.1063/1.1850188 ↗
23. High‐quality ultra‐fine GaN nanowires synthesized via chemical vapor deposition10.1002/adma.200390097 ↗
24. A simple single-source precursor route to the nanostructures of AlN, GaN and InN10.1039/b502887f ↗
25. Porous GaN nanowires synthesized using thermal chemical vapor deposition10.1016/S0009-2614(03)00955-2 ↗
26. Effects of substrate and post‐deposition annealing on structural and optical properties of (ZnO) 1− x (GaN) x films10.1002/pssb.201800529 ↗
27. A new approach to epitaxially grow high-quality GaN films on Si substrates : the combination of MBE and PLD
28. Turski
29. Study on GaN nanostructures: growth and the suppression of the yellow emission10.1016/j.spmi.2018.04.047 ↗
30. Optical anisotropy and light extraction efficiency of MBE grown GaN nanowires epilayers10.1364/OE.19.000527 ↗
31. Probing the correlation between structure, carrier dynamics and defect states of epitaxial GaN film on (1120) sapphire grown by rf-molecular beam epitaxy10.1039/C5RA10099B ↗
32. Refractive indices and elasto-optic coefficients of GaN studied by optical waveguiding10.1063/1.2947598 ↗
33. Effects of step-graded Al x Ga 1− x N interlayer on properties of GaN grown on Si (111) using ultrahigh vacuum chemical vapor deposition10.1063/1.1412824 ↗
34. Strain relaxation in (0001) AlN/GaN heterostructures10.1103/PhysRevB.63.245307 ↗
35. Kidd · 2009 · 119
36. Annealing effects on polycrystalline GaN using nitrogen and ammonia ambients10.1016/j.spmi.2016.05.005 ↗
37. Effects of oxidized Cu and Co layers on the formation of Au ohmic contacts to p-GaN
38. Cullity · 1956
39. pn-Junction photodiode based on GaN grown on Si (111) by plasma-assisted molecular beam epitaxy10.1016/j.mssp.2013.07.015 ↗
40. On the lattice parameters of GaN10.1063/1.2753122 ↗
41. Influence of postdeposition annealing on the structural and optical properties of sputtered zinc oxide film10.1063/1.362842 ↗
42. Study on the effects of growth rate on GaN films properties grown by plasma-assisted molecular beam epitaxy
43. Growth of high-quality N-polar GaN on bulk GaN by plasma-assisted molecular beam epitaxy10.1016/j.ssc.2019.113763 ↗
44. GaN growth on porous silicon by
45. Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures10.1063/1.119060 ↗
46. Extenuation of stress and defects in GaN films grown on a metal–organic chemical vapor deposition-GaN/c-Sapphire substrate by plasma-assisted molecular beam epitaxy10.1021/acs.cgd.5b00125 ↗
47. GaN-on-GaN power device design and fabrication
48. Composition and bandgap control of Al x Ga 1− x N films synthesized by plasma-assisted pulsed laser deposition10.1039/C5TC00475F ↗
49. Lattice dynamics of the zinc-blende and wurtzite phases of nitrides10.1016/S0921-4526(02)00455-6 ↗
50. Vibrational properties of AlN grown on (111)-oriented silicon10.1103/PhysRevB.63.125313 ↗
51. Cleaning of AlN and GaN surfaces10.1063/1.368814 ↗
52. Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction10.1063/1.368355 ↗
53. Fresnel equations and the refractive index of active media10.1103/PhysRevE.73.026605 ↗
54. Optical properties of WO3 thin films using surface plasmon resonance technique10.1063/1.4862962 ↗
55. Fox
56. Refractive indices and elasto- optic coefficients of GaN studied by optical waveguiding
57. Optical properties of hexagonal GaN10.1063/1.365671 ↗