Negative Goos-Hänchen shift induced by AC biasing voltage in ITO-silica microsphere-ITO structure
Source abstract
Abstract
Abstract The Goos-Hanchen (GH) shift of a linearly polarized laser beam, reflected from an indium tin oxide (ITO)-silica microsphere-ITO structure capacitor (ISISC) is studied under an AC biasing voltage. The polarization properties and energy distribution of the optical spots are studied using a polarimeter and slit beam profiler under different frequencies and amplitudes of the AC biasing voltage. It is found that a negative GH shift occurs at a low resonance frequency of 48 Hz and above a voltage of 2.0 V. The dependence of the ISISC's reflectivity on the frequency and amplitude of the AC biasing voltage is also discussed. The changes in the negative GH shift, polarization properties, and reflectivity occur through the combined actions of the electric field and the local field of the ISISC structure.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Quantum optics and atomic interactions · Magneto-Optical Properties and Applications · Photonic and Optical Devices
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