Effect of compressive stress on doping efficiency of nitrogen in ZnO films
Source abstract
Abstract
Nitrogen (N)-doped ZnO films (ZnO:N) grown on the a-/c-plane sapphire substrates (a-/c-Al2O3) by plasma-assisted molecular beam epitaxy were investigated. It was found that the content of N in the ZnO films grown on c-Al2O3 is higher than that of the films grown on a-Al2O3. The ZnO:N films grown on c-Al2O3 have lower carrier concentration and larger intensity ratio of the DAP/D degrees X emission compared with those of the ZnO:N films grown on a-Al2O3 under the same growth conditions, which indicates higher incorporation efficiency of N in the ZnO films grown on c-Al2O3. (C) 2013 Elsevier B.V. All rights reserved.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Ga2O3 and related materials · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (23)
Show source-provided references
1. Look · Mater. Sci. Eng. B · 2001 · 80 · 38310.1016/S0921-5107(00)00604-8 ↗
2. Tang · Appl. Phys. Lett. · 1998 · 72 · 327010.1063/1.121620 ↗
3. Zhu · Appl. Surf. Sci. · 2009 · 255 · 620110.1016/j.apsusc.2009.01.077 ↗
4. Myers · Appl. Phys. Lett. · 2012 · 101 · 11210110.1063/1.4751467 ↗
5. Huong · Mater. Chem. Phys. · 2011 · 126 · 5410.1016/j.matchemphys.2010.12.012 ↗
6. Chiu · Adv. Mater. Res. · 2011 · 415 · 192510.4028/www.scientific.net/AMR.415-417.1925 ↗
7. Wang · Opt. Mater. · 2007 · 29 · 135810.1016/j.optmat.2006.05.010 ↗
8. Jin · Trans. Electr. Electron. Mater. · 2011 · 12 · 16910.4313/TEEM.2011.12.4.169 ↗
9. Zhang · Appl. Phys. Lett. · 2010 · 97 · 22210110.1063/1.3518059 ↗
10. Shet · Thin Solid Films · 2011 · 519 · 598310.1016/j.tsf.2011.03.050 ↗
11. Chen · Appl. Phys. Lett. · 2005 · 87 · 25210610.1063/1.2146309 ↗
12. Li · Thin Solid Films · 2009 · 326510.1016/j.tsf.2008.11.103 ↗
13. Zhao · J. Cryst. Growth · 2005 · 280 · 49510.1016/j.jcrysgro.2005.03.079 ↗
14. Yamauchi · J. Cryst. Growth · 2004 · 260 · 110.1016/j.jcrysgro.2003.08.002 ↗
15. Tamura · Solid State Commun. · 2003 · 127 · 26510.1016/S0038-1098(03)00424-1 ↗
16. Adekore · J. Appl. Phys. · 2007 · 102 · 02490810.1063/1.2751097 ↗
17. Klingshirn · Phys. Stat. Sol. B · 2007 · 244 · 302
18. Kaschner · Appl. Phys. Lett. · 2002 · 80 · 190910.1063/1.1461903 ↗
19. Duan · Appl. Phys. A · 2008 · 91 · 46710.1007/s00339-008-4432-3 ↗
20. Özgür · J. Appl. Phys. · 2005 · 98 · 04130110.1063/1.1992666 ↗
21. Look · Appl. Phys. Lett. · 2002 · 81 · 183010.1063/1.1504875 ↗
22. Meyer · Phys. Status Solidi B · 2004 · 241 · 23110.1002/pssb.200301962 ↗
23. Teke · Phys. Rev. B · 2004 · 70 · 19520710.1103/PhysRevB.70.195207 ↗