The effect of adding CsCl content on physicochemical properties of (GeS2–Sb2S3)100-x(CsCl)x (0 ≤ x ≤ 40 mol%) chalcogenide glass ceramics
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Abstract
Abstract The physico-chemical properties of (GeS2–Sb2S3)100-x(CsCl)x (0 ≤ x ≤ 40 mol%) chalcogenide glass ceramics were theoretically studied. The band gap (Eg) of the studied glassy system was estimated and was found to increase by adding the CsCl content. Furthermore, the positions of the valence band and conduction band edges was determined. The results reveal that the molar volume (Vm) of the studied samples increased while the density (ρ) and the number of atoms per unit volume (N) decreased with increasing the CsCl content. The overall coordination number (CN), constraints number (Ns) and overall mean bond energy ( ) were computed using the chemical bond approach and were found to decrease. In contrast, the number of lone-pair electrons (LP) and cohesive energy (CE) increased. Finally, the glass-transition temperature (Tg) was also estimated based on the overall mean bond energy, and was found to decrease with increasing the CsCl content.
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · Glass properties and applications · Pigment Synthesis and Properties
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References (53)
Show source-provided references
1. Chalcogenide glass-ceramics for radiation shielding applications10.1016/j.ceramint.2020.04.281 ↗
2. Mid-infrared chalcogenide glass Raman fiber laser10.1364/OL.38.000127 ↗
3. Chalcogenide glasses based on germanium disulfide for second harmonic generation10.1002/adfm.200700047 ↗
4. Extreme optical nonlinearities in chalcogenide glass fibers embedded with metallic and semiconductor nanowires10.1063/1.3641423 ↗
5. Optical constants of Ge-Sb-Se-I chalco-halide glasses using a single reflectance spectrum10.1016/j.infrared.2019.102997 ↗
6. Optical constants of ternary Cux (Ge30Se70) 100-x thin films for solar cell applications10.1016/j.optmat.2020.110341 ↗
7. Effect of tellurium addition on the physical properties of germanium selenide glassy semiconductors10.1016/j.physb.2008.06.009 ↗
8. Controlled crystallization of GeS2–Sb2S3–CsCl glass for fabricating infrared transmitting glass-ceramics10.1016/j.jnoncrysol.2005.07.016 ↗
9. Crystallization study of infrared transmitting glass ceramics based on GeS2–Sb2S3–CsCl10.1016/j.jpcs.2007.01.002 ↗
10. Infrared glass–ceramics with fine porous surfaces for optical sensor applications10.1111/j.1551-2916.2007.01675.x ↗
11. Preparation and properties of glasses and glass-ceramics based on GeSe2–Sb2Se3 and halides
12. Preparation and properties of chalcogenide glasses in the GeS2–Sb2S3–CdS system10.1016/j.jnoncrysol.2006.11.032 ↗
13. Shelby · 2005
14. Fe2O3-induced crystallization and the physical properties of lead arsenate glass system10.1016/j.jallcom.2008.01.068 ↗
15. Structure and properties of Ge–Sb–S–CsCl glass–ceramics10.1016/j.matchemphys.2014.05.029 ↗
16. Fabrication and microstructure of Ge-Sb-S-CsCl chalcogenide glass containing β-GeS2 nanocrystals10.4028/www.scientific.net/AMM.665.119 ↗
17. Chemical bond approach to the structures of chalcogenide glasses with reversible switching properties, J. non-cryst
18. Energy-band gap and density of Si-As-Te amorphous semiconductors10.1016/0038-1098(72)90245-1 ↗
19. Relationship between composition, crystallization, and phase separation behavior of GeS2–Sb2S3–CsCl chalcogenide glasses10.1016/j.infrared.2019.102978 ↗
20. Theoretical characterization and band gap tuning of Snx(GeSe2)100-x thin films10.1016/j.matchemphys.2020.123133 ↗
21. Optimization, Electronic band structure, optical, dynamical and thermodynamic properties of cesium chloride (CsCl) from first-principles10.1051/smdo/2015007 ↗
22. Non-linear optical properties and structure of wide band gap non-crystalline semiconductors
23. Optical and photoelectrical properties of chalcogenide glasses, chapter in the book: semiconducting chalcogenide glass III, 80
24. Characterization of new quaternary chalcogenide As–Ge–Se–Sb thin films10.1080/14786430701846214 ↗
25. Band-gap engineering, conduction and valence band positions of thermally evaporated amorphous Ge15-x Sbx Se50 Te35 thin films: influences of Sb upon some optical characterizations and physical parameters10.1016/j.jallcom.2019.05.252 ↗
26. Structural and optical properties of PVP-capped nanocrystalline ZnxCd1−xS solid solutions10.1016/j.spmi.2015.01.011 ↗
27. Optical, structural and photoelectrochemical properties of CdS1−xSex semiconductor films produced by chemical bath deposition10.1016/j.ijhydene.2013.12.088 ↗
28. Band structure-controlled solid solution of Cd1-xZnxS photocatalyst for hydrogen production by water splitting10.1016/j.ijhydene.2006.02.003 ↗
29. Greenwood · 2012
30. Optical and other physical characteristics of amorphous Ge–Se–Ag alloys10.1016/S0921-4526(01)00969-3 ↗
31. Characterization of new quaternary Ge20Se60Sb20−xAgx (0≤ x≤ 20 at.%) glasses10.1016/j.jnoncrysol.2014.10.015 ↗
32. Influence of Cu content on physical characterization and optical properties of new amorphous Ge–Se–Sb–Cu thin films
33. Physical and optical properties of amorphous GexAs20S80–x thin films10.1080/14786435.2010.530615 ↗
34. Effect of Bi addition on the optical behavior of a-Ge–Se–In–Bi thin films10.1016/j.apsusc.2008.08.011 ↗
35. The composition dependence of the optical band gap in Ge–Se–In thin films10.1016/j.optmat.2006.05.003 ↗
36. Evaluation of basic physical parameters of quaternary Ge–Sb-(S, Te) chalcogenide glasses10.1016/j.jnoncrysol.2009.08.028 ↗
37. Constraint theory, vector percolation and glass formation10.1016/0038-1098(85)90381-3 ↗
38. Evaluation of basic physical parameters of quaternary Ge–Sb-(S, Te) chalcogenide glasses10.1016/j.jnoncrysol.2009.08.028 ↗
39. Topology of covalent non-crystalline solids I: short-range order in chalcogenide alloys10.1016/0022-3093(79)90033-4 ↗
40. Continuous deformations in random networks10.1016/0022-3093(83)90424-6 ↗
41. Local structure, bonding, and electronic properties of covalent amorphous semiconductors10.1080/00107517808210876 ↗
42. On the glass transition temperature and related parameters in the glassy GexSe1−x system10.1016/S0921-4526(00)00563-9 ↗
43. Infrared transmitting chalcogenide glass ceramics10.1016/S0022-3093(02)01819-7 ↗
44. Physical evolution in network glasses of the Ag–As–Te system10.1016/j.jpcs.2006.12.033 ↗
45. Local instability of p-type bonding makes amorphous GeTe a lone-pair semiconductor10.1103/PhysRevB.87.155204 ↗
46. Glass-forming ability and rigidity percolation in SeTePb lone-pair semiconductors10.1007/s00339-016-9960-7 ↗
47. On the chemical threshold in chalcogenide glasses10.1016/0167-577X(94)90196-1 ↗
48. Covalent bond approach to the glass-transition temperature of chalcogenide glasses10.1016/0022-3093(95)00202-2 ↗
49. Pauling · 1960
50. The composition dependence of the gap in amorphous films of SixGe1−x, SbxSe1−x and AsxTe1−x systems10.1016/0038-1098(82)91131-0 ↗
51. Electrical and optical properties of amorphous PbxIn25-xSe75 films with a dispersion of nanocrystallites
52. Size of CaF2 crystals precipitated from glasses in the Na2O/K2O/CaO/CaF2/Al2O3/SiO2 system and percolation theory10.1021/cm801426u ↗
53. Self-organized nano-crystallisation of BaF2 from Na2O/K2O/BaF2/Al2O3/SiO2 glasses10.1016/j.jeurceramsoc.2008.08.005 ↗