Room-temperature infrared photoluminescence in GaN doped with various impurities
Source abstract
Abstract
Abstract The steady-state infrared-photoluminescence spectra (IR-PL) emitted from about 400 μm thick, free-standing GaN wafers, grown by the ammono-thermal and hydride vapour-phase epitaxy GaN, and containing carbon, magnesium, manganese and iron doping have been examined. The room-temperature IR-PL spectra are correlated with pulsed-photo-ionization spectra using van Roosbroeck-Schockley approach for spectrum conversion. It has been revealed that iron and carbon dopants appear as the most efficient impurities for the room temperature of infra-red emission from GaN grown using different technologies.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (38)
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1. Room temperature solid-state quantum emitters in the telecom range10.1126/sciadv.aar3580 ↗
2. Structure and photoluminescence studies of Pr-implanted GaN10.1016/j.jcrysgro.2004.04.009 ↗
3. Red light emission by photoluminescence and electroluminescence from Pr-doped GaN on Si substrates10.1063/1.123787 ↗
4. Identification of the 1.19-eV luminescence in hexagonal GaN10.1103/PhysRevB.52.16508 ↗
5. Photoluminescence study of the 1.047 eV emission in GaN10.1063/1.361266 ↗
6. Photoluminescence in Er-implanted AlGaN/GaN superlattices and GaN epilayers10.1016/j.physb.2003.09.177 ↗
7. Near Infrared luminescent device and optical spectroscopy of Er-doped gallium nitride prepared by metalorganic molecular beam epitaxy
8. Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers10.1063/1.111003 ↗
9. Spectroscopic studies of the visible and infrared luminescence from Er doped GaN10.1016/S0921-5107(00)00680-2 ↗
10. Dependence of implantation-induced damage with photoluminescence intensity in GaN:Er10.1016/j.jcrysgro.2004.01.056 ↗
11. GaN epitaxial layers grown on 6H-SiC by the sublimation sandwich technique10.1063/1.112143 ↗
12. Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN10.1103/PhysRevB.63.125203 ↗
13. Tunable room-temperature single-photon emission at telecom wavelengths from sp3 defects in carbon nanotubes10.1038/nphoton.2017.119 ↗
14. Luminescence properties of defects in GaN10.1063/1.1868059 ↗
15. Electrical characterization of HVPE GaN containing different concentrations of carbon dopants10.1088/1361-6641/aaecf0 ↗
16. Study of neutron irradiated structures of ammonothermal GaN10.1088/1361-6463/aa5c6c ↗
17. Review-Carrier lifetime spectroscopy for defect characterization in semiconductor materials and devices10.1149/2.0201604jss ↗
18. Pulsed photo-ionization spectroscopy in carbon doped MOCVD GaN epi-layers on Si10.1088/1361-6641/aaca78 ↗
19. Study of spectral and recombination characteristics of HVPE GaN grown on Ammono substrates10.1016/j.mssp.2018.12.010 ↗
20. Pankove · 1971
21. Photon-radiative recombination of electrons and holes in germanium10.1103/PhysRev.94.1558 ↗
22. Influence of temperature on spectra of optical absorption by deep levels in semiconductors
23. Theory of light absorption and non-radiative transitions in F-centre10.1098/rspa.1950.0184 ↗
24. Tutorial: defects in semiconductors—combining experiment and theory10.1063/1.4948245 ↗
25. On conversion of luminescence into absorption and the van Roosbroeck-Shockley relation10.1063/1.4721495 ↗
26. Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon10.1063/1.2005379 ↗
27. Temperature stability of high-resistivity GaN buffer layers grown by metalorganic chemical vapor deposition10.1116/1.4820905 ↗
28. Deep hole traps in undoped n-GaN films grown by hydride vapor phase epitaxy10.1063/1.4882715 ↗
29. Point defects in GaN, defects in semiconductors
30. Photoluminescence of Fe-complexes in GaN10.1557/PROC-449-707 ↗
31. Optical and magnetic properties of Mn in bulk GaN10.1103/PhysRevB.69.115210 ↗
32. Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy10.1063/1.3415527 ↗
33. Photocurrent spectroscopy investigations of Mg-related defects levels in p-type GaN10.1557/PROC-595-F99W11.83 ↗
34. Optical properties of the deep Mn acceptor in GaN:Mn10.1063/1.1456544 ↗
35. Deep level defects in Mg-doped GaN10.1557/PROC-423-525 ↗
36. Correlative analysis of the in situ changes of carrier decay and proton induced photoluminescence characteristics in chemical vapor deposition grown GaN10.1063/1.4865499 ↗
37. Schubert · 2018
38. Carbon defects as sources of the green and yellow luminescence bands in undoped GaN10.1103/PhysRevB.90.235203 ↗