Luminescence properties of Er 3+ doped zirconia thin films and ZrO 2 /Er 2 O 3 nanolaminates grown by atomic layer deposition
Source abstract
Abstract
Abstract Atomic layer deposited (ALD) ZrO 2 (zirconia) thin films doped with Er 3+ ions by ion implantation as well as ZrO 2 /Er 2 O 3 nanolaminates were investigated at wide 5–300 K temperature range using cathodoluminescence (CL) and photoluminescence (PL) spectroscopy under wide range of excitation energies 6–120 eV. In the studied ALD films main emissions due to self-trapped excitons and defect centers were revealed in UV-visible (VIS) region with the excitation bands in the host absorption. In nanolaminates luminescence processes are influenced by their structure and composition. In films with the lower Er 3+ ion content, typical 4f luminescence of Er 3+ ions were identified being excited through energy transfer from host to doping ions. The luminescence data shows that in contrast to a few hundred nm thick ALD films, the excitonic band near 5.3–5.4 eV are absent in the excitation spectra of nanolaminates with a typical layer thickness of 5 nm, which do not facilitate exciton formation because of limited spatial regularity.
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Research context
OpenAlex topics: Luminescence Properties of Advanced Materials · Semiconductor materials and devices · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (37)
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