Fabrication, structure and luminescence properties of Al2O3/ZnO coaxial nanowires
Source abstract
Abstract
Abstract Al 2 O 3 /ZnO coaxial nanowires were synthesized on (1 0 0) Si substrates by the thermal evaporation of a mixture of Al and TiO 2 powders followed by atomic layer deposition of ZnO. Scanning electron microscopy revealed the Al 2 O 3 /ZnO coaxial nanowires to have a meandering shape with diameters of a few hundreds of nanometers, lengths of a few tens of micrometers and a ZnO shell layer thicknesses of 8–11 nm. Transmission electron microscopy and X-ray diffraction indicated that the cores and shells of the coaxial nanowires were single crystal rhombohedral-structured α-Al 2 O 3 and polycrystalline wurtzite-structured ZnO, respectively. Al, Zn and O were detected in the energy dispersive X-ray spectrum, indicating that the coaxial nanowires contained almost no contaminants. The photoluminescence measurements showed that the Al 2 O 3 nanowires had two weak emission bands centered at ∼710 nm in the red region ∼340 nm in the near-ultraviolet region. In contrast, Al 2 O 3 /ZnO coaxial nanowires had two emission bands: an emission band centered at approximately 570 nm in the yellow region and a weak emission band at approximately 340 nm in the near-ultraviolet region. The yellow emission might have originated from the ZnO shells in the Al 2 O 3 /ZnO coaxial nanowires, whereas the weak near-ultraviolet emission might be from the Al 2 O 3 cores in the core–shell nanowires.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Ga2O3 and related materials · GaN-based semiconductor devices and materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (34)
Show source-provided references
1. Pan · Science · 2001 · 291 · 194710.1126/science.1058120 ↗
2. Mandalapu · Appl. Phys. Lett. · 2008 · 92 · 12210110.1063/1.2901018 ↗
3. Hwang · Appl. Phys. Lett. · 2005 · 86 · 22210110.1063/1.1940736 ↗
4. Kurbanov · J. Phys. D: Appl. Phys. · 2010 · 43 · 11540110.1088/0022-3727/43/11/115401 ↗
5. Lai · Nano Res. · 2008 · 1 · 12310.1007/s12274-008-8017-4 ↗
6. Li · Nanotechnology · 2005 · 16 · 36510.1088/0957-4484/16/4/006 ↗
7. Fang · J. Mater. Chem. · 2003 · 13 · 304010.1039/B309193G ↗
8. Li · Mater. Lett. · 2009 · 63 · 101610.1016/j.matlet.2009.01.072 ↗
9. Fang · Adv. Mater. · 2005 · 17 · 166110.1002/adma.200401921 ↗
10. Zhu · Chem. Mater. · 2002 · 14 · 208610.1021/cm010736a ↗
11. Jin · Appl. Phys. A · 2003 · 77 · 11310.1007/s00339-003-2109-5 ↗
12. Wu · Chem. Comm. · 2005 · 20410.1039/b413700k ↗
13. Tang · J. Cryst. Growth. · 2001 · 224 · 11710.1016/S0022-0248(01)00852-1 ↗
14. Peng · J. Phys. Chem. B · 2002 · 106 · 1116310.1021/jp026028+ ↗
15. Zhao · Appl. Phys. A · 2004 · 79 · 172110.1007/s00339-004-2911-8 ↗
16. Pang · J. Solid State Electrochem. · 2003 · 7 · 34410.1007/s10008-002-0333-0 ↗
17. Xiao · Nano Lett. · 2002 · 2 · 129310.1021/nl025758q ↗
18. Tian · Nanotechnology · 2004 · 15 · 18910.1088/0957-4484/15/1/036 ↗
19. Fang · J Phys: Condens. Mater. · 2004 · 16 · 4157
20. Alivisatos · Science · 1996 · 271 · 93310.1126/science.271.5251.933 ↗
21. Jun · Appl. Phys. A · 2009 · 96 · 81310.1007/s00339-009-5303-2 ↗
22. Lupan · Adv. Mater. · 2010 · 22 · 329810.1002/adma.201000611 ↗
23. Yang · J. Phys. Chem. C · 2008 · 112 · 406810.1021/jp710948j ↗
24. Yang · Small · 2008 · 4 · 211210.1002/smll.200800795 ↗
25. Zhou · Chem. Phys. Lett. · 2002 · 365 · 50510.1016/S0009-2614(02)01456-2 ↗
26. Barlow · Acta. Mater. · 2001 · 49 · 120910.1016/S1359-6454(01)00016-7 ↗
27. Barin · 1995
28. Itou · J. Phys. Chem. C · 2009 · 113 · 2094910.1021/jp908417m ↗
29. Kokonou · Mater. Sci. Eng. · 2003 · B101 · 6510.1016/S0921-5107(02)00653-0 ↗
30. Zhang · Chem. Soc. Rev. · 2012 · 41 · 793810.1039/c2cs35215j ↗
31. Bensalem · New J. Glass Ceram. · 2012 · 2 · 6510.4236/njgc.2012.22010 ↗
32. Singh · Appl. Phys. B · 2012 · 107 · 48910.1007/s00340-012-4993-x ↗
33. Reynolds · Phys. Rev. B · 1998 · 57 · 125110.1103/PhysRevB.57.12151 ↗
34. Vanheusden · J. Appl. Phys. · 1996 · 79 · 798310.1063/1.362349 ↗