journal article·2015-03Open access

Growth of Nd doped (Lu, Gd)3(Ga, Al)5O12 single crystal by the micro pulling down method and their scintillation properties

Kei Kamada, Shunsuke Kurosawa, Akihiro Yamaji, Yasuhiro Shoji, Jan Pejchal, Yuji Ohashi, Yuui Yokota, Akira Yoshikawa

Optical Materials· Volume 41

Abstract

Abstract Nd 1 mol% doped (Lu, Gd)3(Ga, Al)5O12 (LGGAG) single crystals were grown by the micro-pulling down (μ-PD) method. Luminescence and scintillation properties such as absorption, excitation and emission spectra, light yield and decay time were evaluated. Nd1%:Lu3Al5O12 showed the highest light output of around 8200 photons/MeV among the grown crystals. Scintillation decay time of Nd:Y3Al5O12 was 1.32 μs (36%) 2.02 μs (64%). Nd:Lu3Ga3Al2O12 was relatively high dense scintillator of 7.38 g/cm3 with good light yield of 6800 photons/MeV and scintillation decay time of 0.20 μs (5%) 2.60 μs (95%).
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Research context

OpenAlex topics: Radiation Detection and Scintillator Technologies · Atomic and Subatomic Physics Research · Terahertz technology and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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