Epitaxial growth of cubic silicon carbide on silicon by sublimation method

Cubic silicon carbide (3C-SiC) is the most promising material for active devices. Most researches of 3C-SiC epitaxial technology have been focused on chemical vapor deposition (CVD) in the past, but the growth rate of CVD is low. We attempt to grow epitaxial 3C-SiC on Si by sublimation method according to bulk sublimation growth technology. The typical sample is characterized by X-ray diffraction and Raman scattering spectroscopy. The results reveal that the sample is well crystalline.