Analysis of a process simulated graded-index strained silicon-germanium optical phase shifter
Source abstract
Abstract
Abstract This paper analyzes the effect of germanium doping on the performance of an optical PN phase shifter in silicon photonics platform. The fabrication process flow is defined using a 2D process simulation tool to create the phase shifter structure. The mode, material, and loss parameters of the designed phase shifter are calculated and the performance is compared with a silicon phase shifter. A 1.84× higher phase shift, 1.27× lower absorption, and 1.50× lower insertion loss is obtained for the silicon-germanium phase shifter compared to silicon.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Photonic and Optical Devices · Semiconductor Quantum Structures and Devices · Optical Network Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (24)
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