journal article·2015-04

Growth and optical properties of single AgGaGe5Se12 (AGGSe) crystal

Youbao Ni, Haixin Wu, Ruichun Xiao, Changbao Huang, Zhenyou Wang, Mingsheng Mao, Ming Qi, Ganchao Cheng

Optical Materials· Volume 42
Publisher page

Abstract

Abstract High quality crystal AgGaGe5S12 (AGGSe), a promising infrared (IR) nonlinear optical (NLO) material, was grown using seed aided Bridgman Stockbarger technique with dimension size 30 mm in diameter and 60 mm in length. The crystal was characterized with X-ray diffraction, rocking curve, transmission spectrum and laser induced damage threshold (LIDT). The FWHM of the (2 1 0) peak is about 0.06° and the IR transmission is about 61% in an 2 mm thick sample, mean absorption 0.04–0.08 cm−1 in the range 0.95–15 μm. The surface LIDT was measured to be 220 MW/cm2, about triple the value of high quality AgGaS2 crystal with other experimental variable invariant. It may be good candidates for high-power NLO application.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Crystal Structures and Properties · Nonlinear Optical Materials Research

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