Near-infrared light emitting diodes based on the type-II InGaN-ZnSnN2/GaN quantum wells
Source abstract
Abstract
Abstract The near-infrared spectral region is being used for various fields of applications. Near infrared emitters based on InGaN-ZnSnN2 material systems have not been proposed yet. In this paper, a novel type-II InGaN-ZnSnN2/GaN quantum well (QW) light emitting diode structure is presented for the near-infrared emission. Computations are based on the self-consistent solutions of Schrodinger and Poison equations. In the proposed structure, the emission wavelength (λ) and the overlap of electron and hole wave functions ( M e h ) are studied with current densities, for different dopings, compositions and well widths of the structure. It is found that the M e h and the radiative efficiency are more than 30% and 40% respectively. The large overlap of electron and hole wavefunctions should make QW light emitting diodes in the near infrared range based on these structures feasible.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Metal and Thin Film Mechanics · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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