Liquid-phase epitaxy growth and characterization of Co,Si:YAG thin film saturable absorber

Abstract Thin films of Co,Si:YAG were grown on YAG and Er,Yb:YAG substrates by means of the isothermal liquid-phase epitaxy (LPE) dipping technique. X-ray diffraction analysis, optical transmission spectra measurements, and passive Q-switching experiments were performed to characterize the obtained layers. Absorption saturation measurements of Co,Si:YAG thin films were carried out at 1.54 μm. Passive Q-switching of the Er:glass laser by use of epitaxial Co,Si:YAG/YAG was observed. We demonstrated experimentally that the Co,Si:YAG layers could be used as an effective saturable absorber for the lasers operating near 1.5 μm.