journal article·2000-08

Preparation and optical characterization of MOCVD ZnCdInS thin films

A.V Adedeji, M.A Eleruja, I.A.O Ojo, A Djebah, O Osasona, J.O Olowolafe, J.B Aladekomo, E.O.B Ajayi

Optical Materials· Volume 14· Issue 4
Publisher page

Abstract

Abstract The precursor, bis-(morpholinodithiocarbamate-s,s′)-Cd–Zn–In has been prepared and pyrolyzed to obtain ZnCdInS thin films. The results of the compositional studies carried out using RBS and EDXRF were found to be complementary. An optical band gap of 2.53 eV was obtained from both absorbance and PL measurements.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Phase-change materials and chalcogenides

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (15)

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