Study of vibrational modes in (Ga2S3)x−(Ga2Se3)1-x mixed crystals by Raman and infrared reflection measurements
Source abstract
Abstract
Abstract Raman and infrared (IR) reflection characteristics were investigated in the frequency region of 100–450 cm−1 for (Ga2S3)x − (Ga2Se3)1-x mixed crystals for compositions of x increasing from 0.0 to 1.0 by intervals of 0.25 obtained by Bridgman crystal growth technique. In the Raman spectra of these crystals four dominant peak features were observed while two bands were detected in the IR spectra of interest samples. Kramers-Kronig dispersion relations applied to IR spectra presented the frequencies of transverse optical modes. The compositional dependencies of revealed Raman- and IR-active mode frequencies on (Ga2S3)x − (Ga2Se3)1-x crystals were established. One-mode behavior was displayed from indicated dependencies.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Solid-state spectroscopy and crystallography · Phase-change materials and chalcogenides · Optical and Acousto-Optic Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (27)
Show source-provided references
1. Passivation of the GaAs (100) surface with (110) A2III B3VI gallium chalcogenides
2. Optical properties of Ga2Se3 and Ga2Se3:Co2+ single crystals10.1016/S0022-3697(00)00293-6 ↗
3. Memory switching characteristics in amorphous Ga2Se3 films10.1007/s11664-008-0389-4 ↗
4. Structural, thermal and optical studies of Mechanical alloyed Ga40Se60 mixture10.1016/j.ssc.2006.04.017 ↗
5. Determination and analysis of optical constants for Ga2Se3 films near absorption edge10.1016/S0921-4526(02)01544-2 ↗
6. Photoelectrical properties of ordered-vacancy Ga2Se3 single crystals10.1134/S0020168510120034 ↗
7. Blue photoluminescence of α-Ga2S3 and α-Ga2S3:Fe2+ single crystals10.1063/1.1609254 ↗
8. Design and characterization of the Ge/Ga2S3 heterojunction10.1007/s11664-017-5462-4 ↗
9. p-GaSe-n-Ga2S3 heterojunctions10.1134/1.1261689 ↗
10. Ga2S3: optical properties and perspectives for THz applications
11. Sn doped β-Ga2O3 and β-Ga2S3 nanowires with red emission for solar energy spectral shifting10.1063/1.4935633 ↗
12. Synthesis of In2S3 and Ga2S3 for oxygen sensing and UV photodetection10.1016/j.sna.2016.05.003 ↗
13. Two phases of Ga2S3: promising infrared second-order nonlinear optical materials with very high laser induced damage thresholds10.1039/c3tc30808a ↗
14. Synthesis and phase evolutions in layered structure of Ga2S3 semiconductor thin films on epiready GaAs (111) substrates10.1021/am4056535 ↗
15. Etude vibrationnelle de Ga2S310.1016/0584-8539(78)80181-0 ↗
16. Study of crystlas grown from melt and PbCl2 flux10.1016/j.materresbull.2016.08.046 ↗
17. Vibrational studies of copper thiogallate solid solutions10.1016/S0921-5107(98)00418-8 ↗
18. Heat-treatment effect on the structural and optical properties of Ga2Se3-Ga2S3 thin films10.1007/BF00703032 ↗
19. Ac conductivity and dielectric properties of Ga2Se3-Ga2S3 films10.1016/j.physb.2008.09.026 ↗
20. Charge conduction mechanisms and photovoltaic properties of n-(Ga2S3-Ga2Se3)/p-Si heterojunctions10.1051/epjap:2007004 ↗
21. Structural and optical properties of Ga2Se3 crystals by spectroscopic ellipsometry10.1007/s11664-019-07000-4 ↗
22. Optical properties of (Ga2Se3)0.75 – (Ga2S3)0.25 single crystals by spectroscopic ellipsometry10.1016/j.physb.2019.02.023 ↗
23. Spectroscopic ellipsometry investigation of optical properties of β-Ga2S3 single crystals10.1016/j.optmat.2018.09.049 ↗
24. Friel · 2003
25. Goldstein · 2007
26. Raman spectroscopy of sulfur, sulfur-selenium, and sulfur-arsenic mixtures10.1021/j100858a031 ↗
27. Raman study of epitaxial Ga2Se3 films grown by molecular beam epitaxy10.1143/JJAP.31.L186 ↗