InN grown on GaN/sapphire templates at different temperatures by MOCVD

Abstract InN epitaxial layers were grown on GaN/sapphire templates by metalorganic chemical vapor deposition (MOCVD) at various temperatures. It was found that surfaces of these samples were all reticular and the sample surface became rougher as we increased the growth temperature. It was also found that growth rate increased with increasing growth temperature and the growth rate could reach 470 nm/h for the InN epitaxial layer grown at 675 °C. Furthermore, it was found that we achieved the highest mobility of 1300 cm 2 /Vs and the lowest carrier concentration of 4.6 × 10 18 cm −3 from the InN epitaxial layer grown at 625 °C.