Studies of pentacene-based thin film devices produced by cluster beam deposition methods

The cluster beam deposition (CBD) method has been applied to fabricate and characterize pentacene-based thin film devices. Atomic force microscopy, scanning electron microscopy, and X-ray diffraction measurements demonstrate that the weakly bound and highly directional cluster beam is effective in producing a highly ordered structure close to a single crystal with a uniform flat film surface. The hole carrier mobility has been determined to be approximately 10 ⁻⁴ cm ²/V s as a lower bound from the J– V characteristics for the ITO/pentacene/Al devices. The Schottky barrier-type MOSFETs with a 10 μm long channel length have been produced and show a typical source–drain current modulation behavior with different gate voltage.