Growth of GaN on Si substrates – roles of BP thin layer

Abstract Materials for short-wavelength laser emitting devices grown on silicon substrates for opto-electronic coupled integrated circuits have been investigated. One of the most promising materials for the laser is GaN and its mixed alloys. Potential buffer materials that can be grown on Si substrates and that provide a lattice match with GaN are surveyed. Boron monophosphide (BP) is one of the best materials for such a buffer layer. In this paper, we describe the growth of BP epitaxial layers on Si(1 0 0) substrates with area as large as 10×10 mm 2 . The dominant impurity in the BP layers, measured by SIMS analysis is silicon (10 19 atoms / cm 3 ) . As a preliminary experimental, GaN was deposited on the BP/Si substrates at various growth temperatures. Cubic type GaN has a tendency to grow dominantly below 850 °C. The growth of BP on Si and GaN on BP/Si will be discussed.