InGaN/GaN MQW high brightness LED grown by MOCVD

Abstract In this work, InGaN/GaN multi-quantum wells (MQWs) high brightness light emitting diode (LED) was grown by metalorganic chemical deposition (MOCVD). Photoluminescence (PL), X-ray diffraction (XRD), cathodoluminescence (CL), transmission electron microscope (TEM) were performed on the LED wafers to investigate the effects of growth temperature, well width and In composition in the InGaN quantum well on the emitting wavelength of LED. It was found that the wavelength of InGaN MQW-LED shifted from about 400–470 nm due to the difference in the In composition introducing into the InGaN well layer at different growth temperature. It was also demonstrated that the wavelength can be changed from 470 nm to 504 nm only by changed the thickness of the InGaN quantum well layer. Combined with the CL image and TEM observation, it was concluded that the change from MQW structure to multi-quantum dot structure would be the cause of the shift from 470 to 504 nm by changed the InGaN well width.