Thermal tuning of the bandgap in β-(AlxGa1-x)2O3/Al2O3 heterostructures for tunable photodetector performance
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OpenAlex topics: Ga2O3 and related materials · Advanced Photocatalysis Techniques · GaN-based semiconductor devices and materials
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References (39)
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1. Stable and self-powered solar-blind ultraviolet photodetectors based on a Cs3Cu2I5/β-Ga2O3 heterojunction prepared by dual-source vapor codeposition10.1021/acsami.1c00387 ↗
2. Patterned growth of β-Ga2O3 thin films for solar-blind deep-ultraviolet photodetectors array and optical imaging application10.1016/j.jmst.2020.09.015 ↗
3. Review of gallium-oxide-based solar-blind ultraviolet photodetectors10.1364/PRJ.7.000381 ↗
4. Post-annealing effects on Si-doped Ga2O3 photodetectors grown by pulsed laser deposition10.1016/j.jallcom.2021.160291 ↗
5. High-performance solar-blind photodetector of β-Ga2O3 grown on sapphire with embedding an ultra-thin AlN buffer layer10.1016/j.jallcom.2024.176156 ↗
6. β-Gallium oxide as oxygen gas sensors at a high temperature10.1111/j.1551-2916.2007.01842.x ↗
7. Effects of dopant contents on structural, morphological and optical properties of Er-doped Ga2O3 films10.1016/j.spmi.2015.12.025 ↗
8. Temperature dependence of luminescence spectra in europium-doped Ga2O3 film10.1016/j.jlumin.2016.04.013 ↗
9. Low driven voltage green electroluminescent device based on Er: Ga2O3/GaAs heterojunction10.1016/j.optmat.2021.111078 ↗
10. Recent progress in Ga2O3 power devices10.1088/0268-1242/31/3/034001 ↗
11. Resistive random access memory based on gallium oxide thin films for self-powered pressure sensor systems10.1016/j.ceramint.2020.05.191 ↗
12. Atomic layer deposition of Ga2O3/ZnO composite films for high-performance forming-free resistive switching memory10.1021/acsami.0c06476 ↗
13. Optical properties of (AlxGa1-x)2O3 on sapphire10.1016/j.spmi.2017.12.013 ↗
14. Structural and electronic properties of Ga2O3-Al2O3 alloys10.1063/1.5036991 ↗
15. Wide range tunable bandgap and composition β-phase (AlGa)2O3 thin film by thermal annealing10.1063/5.0027067 ↗
16. (AlGa)2O3 solar-blind photodetectors on sapphire with wider bandgap and improved responsivity10.1364/OME.7.001240 ↗
17. Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors10.1063/1.2432946 ↗
18. Study on the optical properties of β-Ga2O3 films grown by MOCVD10.1007/s10854-017-6882-x ↗
19. Effects of post-annealing temperature and oxygen concentration during sputtering on the structural and optical properties of β-Ga2O3 films10.1116/1.4963376 ↗
20. Impact of thermal-induced sapphire substrate erosion on material and photodetector characteristics of sputtered Ga2O3 films10.1016/j.jallcom.2020.153755 ↗
21. Gallium/aluminum interdiffusion between n-GaN and sapphire10.1063/1.368362 ↗
22. Diffusion of gallium in sapphire10.1016/j.jeurceramsoc.2005.06.039 ↗
23. Nitrogen-doped Ga2O3 current blocking layer using MOCVD homoepitaxy for high-voltage and low-leakage Ga2O3 vertical device fabrication10.1063/5.0239622 ↗
24. Effect of annealing on Al diffusion and its impact on the properties of Ga2O3 thin films deposited on c-plane sapphire by RF sputtering10.1002/pssr.202500053 ↗
25. Utilizing (AlGa)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concen tration-dependent diffusion of Al, Sn, and Fe in β-Ga2O310.1063/5.0206398 ↗
26. Growth and characterization of co-sputtered aluminum-gallium oxide thin films on sapphire substrates10.1016/j.jallcom.2018.06.270 ↗
27. Transition alumina phases induced by heat treatment of boehmite: an X-ray diffraction and infrared spectroscopy study10.1016/j.jssc.2009.02.006 ↗
28. High-quality β-(AlxGa1-x)2O3 thin films on sapphire substrates by face-to-face annealing10.1039/D4CE00263F ↗
29. Raman study of β-Ga2O3 single crystals
30. Characterization of aluminum gallium oxide films grown by pulsed laser deposition10.1016/j.ceramint.2018.09.232 ↗
31. Intense photoluminescence from amorphous tantalum oxide films10.1063/1.2219991 ↗
32. Ultra-high performance amorphous Ga2O3 photodetector arrays for solar-blind imaging10.1002/advs.202101106 ↗
33. Sapphire substrate induced effects on β-Ga2O3 thin films10.1007/s10854-022-08212-x ↗
34. Bulk single crystals and physical properties of β-(AlxGa1-x)2O3 (x = 0-0.35) grown by the Czochralski method10.1063/5.0131285 ↗
35. Solar-blind ultraviolet photodetectors based on Ta-doped β-Ga2O3 heteroepitaxial films10.1016/j.optmat.2022.112491 ↗
36. High-performance β-Ga2O3-based solar-blind photodetector with ultralow dark current and fast photoresponse for deep-ultraviolet communication10.1364/OME.449496 ↗
37. Effect of annealing temperature on solar-blind photodetectors based on 60 nm-thick Ga2O3 films10.1007/s00339-023-07178-9 ↗
38. Impact of thermal-induced sapphire substrate erosion on material and photodetector characteristics of sputtered β-Ga2O3 films10.1016/j.jallcom.2020.153755 ↗
39. Bandgap-Tunable aluminum gallium oxide Deep-UV photodetector prepared by RF sputter and thermal interdiffusion alloying method10.3390/pr13010068 ↗