Phase transition and switching behavior in thermally evaporated In2Se3 thin films for memory applications
Source abstract
Abstract
ABSTRACT Indium selenide (In 2 Se 3 ), a binary chalcogenide, crystallizes in multiple phases and has got significant interest for its ability to transition between amorphous and crystalline states. Defects such as vacancies play a crucial role in shaping its structural and electrical properties, making it a promising candidate for phase change memory (PCM) applications. In this study, In 2 Se 3 thin films were deposited on glass substrates using the thermal evaporation technique. The as-deposited films were initially amorphous and transformed into γ-In 2 Se 3 upon annealing, leading to notable changes in its optical and electrical properties. Since phase transition is a key characteristic of phase change materials, temperature-dependent XRD and Raman spectroscopy were conducted to determine the transition temperature. To further validate these findings, temperature-dependent resistance measurements were performed. The γ-In 2 Se 3 films exhibited high crystallization temperatures, and their switching behavior was successfully demonstrated with a threshold electric field and holding field of
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Solid-state spectroscopy and crystallography
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (37)
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1. Deposition and characterization of indium selenide thin films for opto-electronic devices10.21272/jnep.12(2).02010 ↗
2. Sharma · 2020
3. Growth and thermal properties of various In2Se3 nanostructures prepared by single step PVD technique10.1016/j.jallcom.2018.09.335 ↗
4. Growth of γ- In2Se3 monolayer from multifaceted InxSey thin films via annealing and study of its physical properties
5. Study of intrinsic point defects in γ-In2Se3 based on first principles calculations for the realization of an efficient UV photodetector
6. Investigating phase transform behavior in indium selenide based RAM and its validation as a memory element
7. Buya · 2013
8. Effect of annealing on structural, morphological and optical properties of InSe thin films10.1007/s10854-022-09118-4 ↗
9. Deposition techniques for chalcogenide thin films
10. Advance deposition techniques for thin film and coating
11. Fabrication of -InSe-Based photodetector using RF Magnetron sputtering and investigations of its temperature-dependent properties10.1109/JSEN.2023.3239808 ↗
12. 2020
13. Annealing temperature effect on the properties of CoCe thin films prepared by magnetron sputtering at Si(100) and glass substrates10.3390/pr12122806 ↗
14. Annealing temperature effect on structural and optoelectronic properties of γ-In2Se3 thin films towards highly stable photodetector applications
15. T. H. Gfroerer, “Photoluminescence in Analysis of Surfaces and Interfaces.” doi: doi.org/10.1002/9780470027318.a2510.
16. Sublimation process and physical properties of vapor grown γ-In2Se3 platelet crystals10.1016/j.jcrysgro.2016.08.004 ↗
17. Marsillac
18. Low-Dimensional In2Se3Compounds: from material preparations to device applications
19. K. Bindu, C. Sudha Kartha, K. P. Vijayakumar, T. Abe, and Y. Kashiwaba, “Structural, Optical and Electrical Properties of in 2 Se 3 Thin ®Lms Formed by Annealing Chemically Deposited Se and Vacuum Evaporated in Stack Layers.”.
20. Successive crystallization in indium selenide thin films for multi-level phase-change memory
21. Switching behavior of indium selenide-based phase-change memory cell10.1109/TMAG.2004.842032 ↗
22. Switching characterization and failure analysis of in2Se 3 based phase change memory10.1143/JJAP.44.4759 ↗
23. N. A. Hegab and M. Fadel, “Memory Switching Phenomena in Thin Films of Chalcogenide Semiconductors the current-voltage Characteristic in the OFF-state and the Switching Phenomenon are Investigated in Gezom.”.
24. Switching and memory effects in amorphous chalcogenide thin films10.1109/T-ED.1973.17620 ↗
25. Direct observation of conversion between threshold switching and memory switching induced by conductive filament morphology10.1002/adfm.201401304 ↗
26. Phase change materials and their application to nonvolatile memories10.1021/cr900040x ↗
27. Indium local geometry in in-sb-te thin films using XANES and DFT calculations10.1016/j.apsusc.2017.07.063 ↗
28. X-ray absorption near-edge structure (XANES) spectroscopy
29. Low-temperature growth of γ phase in thermally deposited In2Se3 thin films10.1080/01411594.2018.1508680 ↗
30. Influence of indium concentration and growth temperature on the structural and optoelectronic properties of indium selenide thin films10.1002/pssb.201248268 ↗
31. In2Se3 nanosheets with broadband saturable absorption used for near-infrared femtosecond laser mode locking10.1088/1361-6528/ab33d2 ↗
32. Synthesis of In2Se3 nanoparticles with variable molar ratio and its investigation of structural, optical, and photocatalytic activity for the degradation of hazardous organic dyes
33. Room-temperature ferroelectricity and a switchable diode effect in two-dimensional α-In2Se3 thin layers10.1039/C8NR04422H ↗
34. Preparation and optical properties of In2Se3 nanospheres using CTAB as surface modifier10.1016/j.ceramint.2019.09.067 ↗
35. Structural phase transition and erasable optically memorized effect in layered γ-In2Se3 crystals10.1063/1.4862184 ↗
36. Thermal phase transformation of In2Se3 nanowires studied by in situ synchrotron radiation X-ray diffraction10.1039/c1jm10419e ↗
37. Influence of indium concentration on the structural and optoelectronic properties of indium selenide thin films10.1016/j.optmat.2014.10.033 ↗