Influence of quantum well thickness on the Cathodoluminescent properties of AlGaN-based UVC light source tube with CNT field emitters
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · Photocathodes and Microchannel Plates
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (34)
Show source-provided references
1. Efficiency of light emission in high aluminum content AlGaN quantum wells10.1063/1.3103321 ↗
2. Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency10.1063/1.3130755 ↗
3. Band structure and fundamental optical transitions in wurtzite AlN10.1063/1.1633965 ↗
4. Anisotropic absorption and emission of bulk (1-100) AlN10.1103/PhysRevB.87.235209 ↗
5. Optical anisotropy in [0001]-oriented AlxGa1–xN/AlN quantum wells (x>0.69)10.1103/PhysRevB.79.121308 ↗
6. 222–282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire10.1002/pssa.200880961 ↗
7. Sapphire wafer for 226 nm far UVC generation with carbon nanotube-based cold cathode electron beam (C-beam) irradiation10.1021/acsomega.0c01824 ↗
8. Correlation between optical and electrical properties of Mg-doped AlN epilayers10.1063/1.2362582 ↗
9. Characteristic of high Al-content AlGaN/AlN quantum wells fabricated by modified migration enhanced epitaxy10.1002/pssc.200983609 ↗
10. Marked enhancement in the efficiency of deep-ultraviolet AlGaN light-emitting diodes by using a multi quantum-barrier electron blocking layer10.1143/APEX.3.031002 ↗
11. Efficient electrochemical potentiostatic activation method for GaN-based green vertical-LEDs10.1149/2.002184jss ↗
12. Electrochemical removal of hydrogen atoms in Mg-doped GaN epitaxial layers10.1063/1.4920927 ↗
13. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres10.1038/nature04760 ↗
14. Electrochemical potentiostatic activation for improvement of internal quantum efficiency of 385-nm ultraviolet light-emitting diodes10.1016/j.apsusc.2013.06.138 ↗
15. Effect of residual compressive stress on near-ultraviolet InGaN/GaN multi-quantum well light-emitting diodes10.1016/j.optmat.2014.10.015 ↗
16. The piezotronic effect in InGaN/GaN quantum-well based microwire for ultrasensitive strain sensor10.1016/j.nanoen.2020.104660 ↗
17. Influence of electric field and current on the strength of depoled GaN piezoelectric semiconductive ceramics10.1016/j.ceramint.2017.11.219 ↗
18. Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes10.7567/APEX.6.062101 ↗
19. Stress engineering by controlling sapphire substrate thickness in 520 nm GaN-based light-emitting diodes10.7567/APEX.6.122103 ↗
20. Dominance of radiative recombination from electron-beam-pumped deep-UV AlGaN multi-quantum-well heterostructures10.1063/1.4967220 ↗
21. 100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam10.1038/nphoton.2010.220 ↗
22. Handheld deep ultraviolet emission device based on aluminum nitride quantum wells and graphene nanoneedle field emitters10.1364/OE.20.024320 ↗
23. E‐beam pumped mid‐UV sources based on MBE‐grown AlGaN MQW
24. High‐output‐power ultraviolet light source from quasi‐2D GaN quantum structure10.1002/adma.201600990 ↗
25. High-efficiency electron-beam-pumped sub-240-nm ultraviolet emitters based on ultra-thin GaN/AlN multiple quantum wells grown by plasma-assisted molecular-beam epitaxy on c-Al2O310.7567/APEX.11.091003 ↗
26. Cathodoluminescence of a 2 inch ultraviolet-light-source tube based on the integration of algan materials and carbon nanotube field emitters10.1039/C9TC03365C ↗
27. Field emission from carbon nanostructures10.3390/app8040526 ↗
28. Nucleation mechanism for epitaxial growth of GaN on patterned sapphire substrates10.1016/j.jallcom.2014.05.035 ↗
29. Scanning electron imaging with vertically aligned carbon nanotube (CNT) based cold cathode electron beam (C-beam)10.1016/j.vacuum.2020.109696 ↗
30. Field emission from carbon nanostructures10.3390/app8040526 ↗
31. Enhancement of light extraction in ultraviolet light-emitting diodes using nanopixel contact design with Al reflector10.1063/1.3334721 ↗
32. Optimized aluminum reflector for enhancement of UVC Ca-thodoluminescence based-AlGaN materials with carbon nanotube field emitters10.3390/molecules26134025 ↗
33. Nanopatterned sapphire substrate to enhance the efficiency of AlGaN-based UVC light source tube with CNTs electron-beam10.1039/D0TC04597G ↗
34. Growth and characterization of AlGaN multiple quantum wells for electron-beam target for deep-ultraviolet light sources10.7567/JJAP.52.01AF03 ↗