Mie lattice resonance sensors with high figures of merit via Si/SiO2 nanoparticle arrays

Abstract A Mie lattice resonance (MLR) sensor of Si/SiO2 nanoparticle array is presented to obtain a high figure of merit (FOM). In Si/SiO2 nanopillar array, each Si nanoparticle is on top of each SiO2 nanopillar, which is laid on the quartz substrate. The simulated results show that FOM can reach a value of 163 due to both narrow full-width at half maximum (FWHM) and high sensitivity of the MLR. The shape and diameter of Si nanoparticles, the period of the array have remarkable influences on the FOM. The optimized shape of Si nanoparticles in FOM is sphere because the FWHM of Si nanospheres is the narrowest. A smaller diameter of Si nanospheres or larger period of the array will increase the FOM but decrease the contrast between the transmittance dip and peak. The optimized diameter of Si nanospheres and period of the array are 114 nm and 450 nm, respectively. This work offers a new channel to promote the FOM of the MLR sensors.