Effects of strain and composition distribution on the optical characteristics of GaAs/InGaAlAs/GaAs double asymmetric tunnel-coupled quantum wells
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor Lasers and Optical Devices · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (40)
Show source-provided references
1. Quantum dot optoelectronicdevices: lasers, photodetectors and solar cells10.1088/0022-3727/48/36/363001 ↗
2. A review on quantum well structures in photonic devices for enhanced speed and span of the transmission network10.1007/s12648-010-0097-9 ↗
3. InGaAs/InAlAs multiple-quantum-well optical modulator integrated with a planar antenna for a millimeter-wave radio-over-fiber system10.1364/OE.389574 ↗
4. Model effective-mass Hamiltonians for abrupt heterojunctions and the associated wave-function-matching conditions10.1103/PhysRevB.30.678 ↗
5. Heavy-light hole mixing at zinc-blende (001) interfaces under normal incidence10.1103/PhysRevB.54.5852 ↗
6. Interface electronic states and boundary conditions for envelope functions10.1103/PhysRevB.65.165328 ↗
7. Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction10.1063/1.1621738 ↗
8. Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry10.1016/S0921-5107(01)00971-0 ↗
9. Segregation of indium in InGaAs/GaAs quantum wells grown by vapor-phase epitaxy10.1134/1.1548664 ↗
10. Band-edge diagrams for strained III–V semiconductor quantum wells, wires, and dots10.1103/PhysRevB.72.205311 ↗
11. Photoluminescence studies of In0.7Al0.3 As/In0.75Ga0.25As/In0.7Al0.3As10.1134/S1063782614050078 ↗
12. Effect of localized states on the optical properties in InGaAs/GaAs multiple quantum wells grown by MOCVD10.1016/j.photonics.2022.101047 ↗
13. LSE investigation of the thermal effect on band gap energy and thermodynamic parameters of BInGaAs/GaAs Single Quantum Well10.1016/j.optmat.2016.10.010 ↗
14. Quantitative measurement of displacement and strain fields from HREM micrographs10.1016/S0304-3991(98)00035-7 ↗
15. Investigation of deformations and strain fields in silicon matrix structures embedded with vertically stacked Ge(Si) self-assembled islands10.1063/1.4900554 ↗
16. Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope10.1016/j.micron.2015.09.001 ↗
17. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains10.1063/1.4902311 ↗
18. Atomic-resolution EDX, HAADF, and EELS study of GaAs1-xBix alloys10.1186/s11671-020-03349-2 ↗
19. Sb surfactant mediated growth of InAs/AlAs0.56Sb0.44 strained quantum well for intersubband absorption at 1.55 μm10.1063/1.4913845 ↗
20. Structure, morphology, and optical properties of GaxIn1−xN0.05As0.95 quantum wells: influence of the growth mechanism10.1103/PhysRevB.76.085309 ↗
21. Photoluminescence of AlGaAs alloys10.1063/1.355769 ↗
22. Field-induced optical effect in a five-step asymmetric coupled quantum well with modified potential10.1109/3.687863 ↗
23. Asymmetric quantum wells with enhanced QCSE: modulation behavior and application for integrated laser/modulator10.1109/68.553087 ↗
24. Multi-parameter optimisation of an InP electro-optic modulator10.3390/sym12111920 ↗
25. CL-TWE Mach-Zender electro-optic modulator based on InP-MQW optical waveguides10.3788/COL201917.061301 ↗
26. Electric-field-induced refractive index changes in InGaAs-InAlAs asymmetric coupled quantum wells10.1109/3.341712 ↗
27. Effect of In-segregation on subbands in GaInNAs/GaAs quantum wells emission around 1.3 and 1.55 micron10.1007/s11082-006-9042-8 ↗
28. Detecting spatially localized exciton in self-organized InAs/InGaAs quantum dot superlattices: a way to improve the photovoltaic efficiency10.1186/s11671-017-2218-2 ↗
29. A model for steady-state luminescence of localized-state ensemble10.1209/epl/i2005-10170-7 ↗
30. Quantitative interpretation of the phonon-assisted redistribution processes of excitons in Zn1-xCdxSe quantum islands10.1103/PhysRevB.69.045318 ↗
31. Theoretical investigation of indium surface segregation in InGaN thin films10.1380/ejssnt.2005.503 ↗
32. Optical study of segregation effects on the electronic properties of molecular-beam-epitaxy grown10.1103/PhysRevB.55.2406 ↗
33. Origin of reflection high-energy electron-diffraction intensity oscillations during10.1103/PhysRevLett.58.2235 ↗
34. Monte Carlo simulation of in surface segregation during the growth10.1103/PhysRevB.53.998 ↗
35. InAs/GaAs pyramidal quantum dots: strain distribution, optical phonons, and electronic structure10.1103/PhysRevB.52.11969 ↗
36. Modelling of the composition segregation effect during epitaxial growth of InGaAs quantum well10.1088/0268-1242/25/8/085008 ↗
37. Energy levels of strained InxGa1-xAs-GaAs superlattices10.1103/PhysRevB.41.12650 ↗
38. Bastard · 1990 · 237
39. Anisotropy of interband transitions in InAs quantum wires: an atomistic theory10.1103/PhysRevB.70.165317 ↗
40. Design of tunnel-coupled quantum wells for a Mach–Zehnder scheme10.21883/SC.2022.09.54123.35 ↗