Comparative study on structure and electronic properties of Al0.5Ga0.5N thin film and nanowire photocathode under surface oxidation
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OpenAlex topics: Photocathodes and Microchannel Plates · GaN-based semiconductor devices and materials · Ga2O3 and related materials
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References (33)
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1. Control performance of a single-chip white light emitting diode by adjusting strain in InGaN underlying layer10.1063/1.3103559 ↗
2. Self-organized GaN quantum wire UV lasers10.1021/jp034734k ↗
3. Study of spectral response characteristic of negative electron affinity GaN photocathode10.7498/aps.59.3577 ↗
4. Development trends of GaN-based wide bandgap semiconductors: from solid state lighting to power electronic devices10.1007/s12200-015-0459-1 ↗
5. Effect of residual gas on the optoelectronic properties of Mg-doped Ga0.75Al0.25N (0001) surface10.1016/j.apsusc.2021.149455 ↗
6. Density of states, hybridization, and band-gap evolution in AlxGa1-xN alloys10.1103/PhysRevB.58.1928 ↗
7. Determination of Al molar fraction in AlxGa1-xN films by Raman scattering10.1063/1.3610525 ↗
8. Research on electronic structure and optical properties of Mg doped Ga0.75Al0.25N10.1016/j.optmat.2013.11.028 ↗
9. Influence of Al fraction on photoemission performance of AlGaN photocathode10.1364/AO.53.003637 ↗
10. Solar-blind AlGaN-based inverted heterostructure photodiodes10.1063/1.126962 ↗
11. Solar-blind MSM-photodetectors based on AlxGa1-xN/GaN heterostructures grown by MOCVD10.1016/j.sse.2007.10.037 ↗
12. Photoemission characteristics of (Cs, O) activation exponential-doping Ga0.37Al0.63As photocathodes10.1063/1.4808291 ↗
13. Low energy electron microscopy and Auger electron spectroscopy studies of Cs-O activation layer on p-type GaAs photocathode10.1063/1.4901201 ↗
14. A density functional theory research on Cs-O activation process of GaAlAs photocathodes10.1007/s10853-016-0103-5 ↗
15. Study of Cs adsorption on (100) surface of [001]-oriented GaN nanowires: a first principle research10.1016/j.apsusc.2016.07.050 ↗
16. Cs and Cs/O adsorption mechanism on GaN nanowires photocathode10.1007/s10853-017-0801-7 ↗
17. Combined HREELS/LEED study on the oxidation of GaN surfaces
18. Oxygen-rich GaN(10-10) surfaces: first-principles total energy calculations10.1103/PhysRevB.73.115304 ↗
19. Surface chemical cleaning of the extended blue varied-doping Ga0.37Al0.63As photocathode10.1016/j.apsusc.2017.04.242 ↗
20. Evaluation of chemical cleaning for Ga1-xAlxAs photocathode by spectral response10.1016/j.optcom.2013.08.006 ↗
21. First-principles study on structural stability and electronic properties of GaAs nanowire undergoing surface oxidization10.1016/j.apsusc.2019.144231 ↗
22. A DFT study of atomic geometry and electronic structures for oxidized Al0.25Ga0.75N (001) (2×2) reconstruction surfaces10.1016/j.apsusc.2015.02.017 ↗
23. A first principle study on oxygen adsorption and incorporation on the (100) surface of [001]-oriented GaN nanowires10.1088/2053-1591/aa62d3 ↗
24. First-principles simulation: ideas, illustrations and the CASTEP code10.1088/0953-8984/14/11/301 ↗
25. Generalized gradient approximation made simple10.1103/PhysRevLett.77.3865 ↗
26. Exploration the p-type doping mechanism of GaAs nanowires from first-principles study10.1016/j.physleta.2018.10.037 ↗
27. Impact of residual gas on the optoelectronic properties of Cs-sensitized In0.53Ga0.47As (001) surface10.1016/j.jcis.2021.03.043 ↗
28. Alkali-metal-adsorbed g-GaN monolayer: ultralow work functions and optical properties10.1186/s11671-018-2625-z ↗
29. Comparative study of adsorption characteristics of Cs on the GaN (0001) and GaN (000-1) surfaces10.1088/1674-1056/21/6/067103 ↗
30. Oxygen adsorption and incorporation at irradiated GaN(0001) and GaN(000-1) surfaces: first-principles density-functional calculations10.1103/PhysRevB.74.195317 ↗
31. A first principle study on systematic stability and electronic properties of GaN nanowire surface with Cs/Li/NF3 co-adsorption10.1016/j.apsusc.2019.01.279 ↗
32. Band-structure-corrected local density approximation study of semiconductor quantum dots and wires10.1103/PhysRevB.72.125325 ↗
33. First principles study of electronic properties of gallium nitride nanowires grown along different crystal directions10.1016/j.commatsci.2010.08.024 ↗