journal article·2025-02

Fabrication of InAs 2D submonolayer nanostructure-based solar cells with InGaAs/GaAsSb double-well structure

Wei-Sheng Liu, Ting-Kai Yang, Ming-En Hsu, Kai-Yang Hsu, Bhavya Kondapavuluri, Jen-Inn Chyi

Optical Materials· Volume 159
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OpenAlex topics: Semiconductor Quantum Structures and Devices · Nanowire Synthesis and Applications · Quantum Dots Synthesis And Properties

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References (47)

Show source-provided references
1. Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells10.1063/1.2973398 ↗
2. Quantum dot solar cells10.1016/S1386-9477(02)00374-0 ↗
3. Present status of intermediate band solar cell research10.1016/j.tsf.2003.11.047 ↗
4. Intermediate-band solar cells based on quantum dot supracrystals10.1063/1.2799172 ↗
5. Production of photocurrent due to intermediate-to-conduction-band transitions: a demonstration of a key operating principle of the intermediate-band solar cell10.1103/PhysRevLett.97.247701 ↗
6. Microstructures produced during the epitaxial growth of InGaN alloys10.1016/j.jcrysgro.2009.12.018 ↗
7. Enhanced V oc in InAs quantum-dot Based pin solar cells using a non-alternating strain-balancing epitaxial growth method
8. Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels10.1103/PhysRevLett.78.5014 ↗
9. Submonolayer quantum dots for optoelectronic devices10.3938/jkps.73.833 ↗
10. Recent progress towards quantum dot solar cells with enhanced optical absorption10.1186/s11671-016-1457-y ↗
11. Structural investigation of the 2D to 3D transition in stacked submonolayer InAs nanostructures10.1063/5.0052722 ↗
12. Submonolayer InGaAs/GaAs quantum dot solar cells10.1016/j.solmat.2014.03.046 ↗
13. Submonolayer InGaAs∕ GaAs quantum-dot lasers with high modal gain and zero-linewidth enhancement factor10.1063/1.1806564 ↗
14. Characteristics of broad-area InGaAs submonolayer quantum-dot vertical-cavity surface-emitting lasers10.1143/JJAP.46.6670 ↗
15. Fabrication and characterization of InAs/InGaAs sub-monolayer quantum dot solar cell with dot-in-a-well structure10.1016/j.cap.2016.02.009 ↗
16. Effect of barrier on the performance of sub-monolayer quantum dot infrared photodetectors10.1364/OME.4.000198 ↗
17. Scaling phenomenon of graphene surface plasmon modes in grating-spacer-graphene hybrid systems10.1364/OE.22.020214 ↗
18. Tailoring energy band alignment of vertically aligned InGaAs quantum dots capped with GaAs (Sb)/AlGaAsSb composite structure after thermal annealing treatment10.1021/acsphotonics.6b00480 ↗
19. Improved optical properties of InAs submonolayer quantum dots in GaAsSb/InGaAs double-well structure10.1063/1.5097879 ↗
20. Capping vertically aligned InGaAs/GaAs (Sb) quantum dots with a AlGaAsSb spacer layer in intermediate‐band solar cell devices10.1002/pip.2815 ↗
21. Capping effect of GaAsSb and InGaAsSb on the structural and optical properties of type II GaSb/GaAs quantum dots10.1063/1.4707385 ↗
22. Formation of the axial heterojunction in GaSb/InAs (Sb) nanowires with high crystal quality10.1021/cg200829q ↗
23. Suppression of InAs∕ GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer10.1063/1.2741608 ↗
24. Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm10.1063/1.125010 ↗
25. Coordination-induced broadband optical nonlinearity through axial bonding of pyridine anchored methine-bridged polypyrrole to metal-porphyrins10.1016/j.dyepig.2018.04.031 ↗
26. Optical storage behaviour in InAs quantum dots embedded in GaAs quantum well structure10.1049/mnl.2016.0339 ↗
27. Carrier delocalization in InAs/InGaAlAs/InP quantum-dash-based tunnel injection system for 1.55 μm emission10.1063/1.4975634 ↗
28. Lateral carrier diffusion in InGaAs/GaAs coupled quantum dot-quantum well system10.1063/1.4984747 ↗
29. Optical properties of InAs/GaAs quantum dot superlattice structures10.1016/j.rinp.2018.02.016 ↗
30. Tuning the Optical properties of InAs QDs by means of digitally - alloyed GaAsSb strain reducing layers10.1063/1.5048475 ↗
31. High density InAs/GaAs quantum dots with enhanced photoluminescence intensity using antimony surfactant-mediated metal organic chemical vapor deposition10.1063/1.2385209 ↗
32. Use of a GaAsSb buffer layer for the formation of small, uniform, and dense InAs quantum dots10.1063/1.3409691 ↗
33. Material and device Characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells10.1063/1.4933272 ↗
34. GaAsSb-capped InAs quantum dots: from enlarged quantum dot height to alloy fluctuations10.1103/PhysRevB.81.165305 ↗
35. Study on the energy-band structure of an InAs/InGaAs/GaAs quantum-dot infrared photodetector structure
36. Ultrafast carrier dynamics in an InAs/InGaAs quantum dots-in-a-well heterostructure10.1364/OE.16.001165 ↗
37. Sub-monolayer InAs/InGaAs quantum dot infrared photodetectors (SML-QDIP)
38. Type-II InAs/GaAsSb quantum dot solar cells with GaAs interlayer10.1109/JPHOTOV.2018.2815152 ↗
39. Sub-monolayer quantum dots in confinement enhanced dots-in-a-well heterostructure10.1063/1.4711214 ↗
40. In situ study of the formation kinetics of InSb quantum dots grown in an InAs (Sb) matrix10.1134/S1063782608010107 ↗
41. Tuning quantum dot properties by activated phase separation of an InGa (Al) as alloy grown on InAs stressors10.1103/PhysRevB.62.16671 ↗
42. Catalyst-free growth of nanographene films on various substrates10.1007/s12274-010-0086-5 ↗
43. Ultra-high stacks of InGaAs/GaAs quantum dots for high efficiency solar cells10.1039/c2ee01930b ↗
44. Carrier dynamics of a type-II vertically aligned InAs quantum dot structure with a GaAsSb strain-reducing layer
45. Multi-stacked InAs/GaAs quantum dots grown with different growth modes for quantum dot solar cells10.1063/1.4922274 ↗
46. The role of intersubband optical transitions on the electrical properties of InGaAs/GaAs quantum dot solar cells10.1002/pip.2161 ↗
47. Si-doped InAs/GaAs quantum-dot solar cell with AlAs Cap layers10.1109/JPHOTOV.2016.2547581 ↗